主页>> 发表论文

2024

238. Xiaozhou Zan, Xiangdong Guo, Aolin Deng, Zhiheng Huang, Le Liu, Fanfan Wu, Yalong Yuan, Jiaojiao Zhao, Yalin Peng, Lu Li, Yangkun Zhang, Xiuzhen Li, Jundong Zhu, Jingwei Dong, Dongxia Shi, Wei Yang, Xiaoxia Yang, Zhiwen Shi, Luojun Du, Qing Dai & Guangyu Zhang, Electron/infrared-phonon coupling in ABC trilayer graphene. Nature Communications 15, 1, 1888 (2024) doi.org/10.1038/s41467-024-46129-7 (link)

237. Lu Li, Qinqin Wang, Fanfan Wu, Qiaoling Xu, Jinpeng Tian, Zhiheng Huang, Qinghe Wang, Xuan Zhao, Qinghua Zhang, Qinkai Fan, Xiuzhen Li, Yalin Peng, Yangkun Zhang, Kunshan Ji, Aomiao Zhi, Huacong Sun, Mingtong Zhu, Jundong Zhu, Nianpeng Lu, Ying Lu, Shuopei Wang, Xuedong Bai, Yang Xu, Wei Yang, Na Li, Dongxia Shi, Lede Xian, Kaihui Liu, Luojun Du & Guangyu Zhang, Epitaxy of wafer-scale single-crystal MoS2 monolayer via buffer layer control. Nature Communications 15, 1, 1825 (2024) doi.org/10.1038/s41467-024-46170-6 (link)

236. Luojun Du, New excitons in multilayer 2D materials. Nature Review Physics 6, 157-159 (2024) doi.org/10.1038/s42254-024-00704-5 (link)

235. Xianliang Zhou, Yi Chen, Jiajun Chen, Cheng Hu, Bosai Lyu, Kunqi Xu, Shuo Lou, Peiyue Shen, Saiqun Ma, Zhenghan Wu, Yufeng Xie, Zhichun Zhang, Zhiguo Lü, Weidong Luo, Qi Liang, Lede Xian, Guangyu Zhang, Zhiwen Shi, Pressure-induced flat bands in one-dimensional moiré superlattices of collapsed chiral carbon nanotubes. Phys. Rev. B 109, 045105 (2024) doi.org/10.1103/PhysRevB.109.045105 (link)

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2023

234. Fanfan Wu, Qiaoling Xu, Qinqin Wang, Yanbang Chu, Lu Li, Jian Tang, Jieying Liu, Jinpeng Tian, Yiru Ji, Le Liu, Yalong Yuan, Zhiheng Huang, Jiaojiao Zhao, Xiaozhou Zan, Kenji Watanabe, Takashi Taniguchi, Dongxia Shi, Gangxu Gu, Yang Xu, Lede Xian, Wei Yang, Luojun Du, Guangyu Zhang, Giant Correlated Gap and Possible Room-Temperature Correlated States in Twisted Bilayer MoS2. Phys. Rev. L 131, 25, 256201 (2023) doi.org/10.1103/PhysRevLett.131.256201 (link)

233. Biying Huang, Yuchen Wang, Lu Li, Qinqin Wang, Yalin Peng, Xiuzhen Li, Yangkun Zhang, Luojun Du, Wei Yang, Dongxia Shi, Na Li*, Guangyu Zhang*, MoS2-Thin Film Transistor Based Flexible 2T1C Driving Circuits for Active-Matrix Displays. Nano Letters 23, 20, 9333-9339 (2023) doi.org/10.1021/acs.nanolett.3c02533 (link)

232. Yalin Peng, Lu Li, Biying Huang, Jinpeng Tian, Xiuzhen Li, Jian Tang, Yanbang Chu, Dongxia Shi, Luojun Du, Na Li*, Guangyu Zhang*, Gate-Last MoS2 Transistors for Active-Matrix Display Driving Circuits. Adv. Funct. Mater 33, 2304879 (2023) doi.org/10.1002/adfm.202304879 (link)

231. Nanjia Jiang, Jian Tang, Woyu Zhang, Yi Li, Na Li, Xiuzhen Li, Xi Chen, Renrui Fang, Zeyu Guo, Fei Wang, Jun Wang, Zhi Li, Congli He*, Guangyu Zhang*, Zhongrui Wang*, Dashan Shang*, Bioinspired In-Sensor Reservoir Computing for Self-Adaptive Visual Recognition with Two-Dimensional Dual-Mode Phototransistors. Adv. Optical Mater 11, 2300271 (2023) doi.org/10.1002/adom.202300271 (link)

230. Na Li, Songge Zhang, Yalin Peng, Xiuzhen Li, Yangkun Zhang, Congli He*, Guangyu Zhang*, 2D Semiconductor-Based Optoelectronics for Artificial Vision. Adv. Funct. Mater 2305589 (2023) doi.org/10.1002/adfm.202305589 (link)

229. Haoran Mu, Renzhong Zhuang, Nan Cui, Songhua Cai, Wenzhi Yu, Jian Yuan*, Jingni Zhang, Hao Liu, Luyao Mei, Xiaoyue He, Zengxia Mei, Guangyu Zhang*, Qiaoliang Bao*, Shenghuang Lin*, Alternating BiI3-BiI van der Waals Photodetector with Low Dark Current and High-Performance Photodetection. ACS Nano 17, 21, 21317-21327 (2023) doi.org/10.1021/acsnano.3c05849 (link)

228. Lu Li, Yalin Peng, Jinpeng Tian, Fanfan Wu, Xiang Guo, Na Li, Wei Yang, Dongxia Shi, Luojun Du*, Guangyu Zhang*, Batch fabrication of MoS2 devices directly on growth substrates by step engineering. Nano Research 16 (11), 12794-12799 (2023) doi.org/10.1007/s12274-023-6180-2 (link)

227. Yang Wei, Zhang Guangyu*, Revived superconductivity in twisted double bilayer graphene. Nature Materials 22,1285-1286 (2023) doi.org/10.1038/s41563-023-01685-z (link)

226. Zhang Yu, Xu Hongjun, Jia Ke, Lan Guibin, Huang Zhiheng, He Bin, He Congli, Shao Qiming, Wang Yizhan, Zhao Mingkun, Ma Tianyi, Dong Jing, Guo Chenyang, Cheng Chen, Feng Jiafeng, Wan Caihua, Wei Hongxiang, Shi Youguo, Zhang Guangyu, Han Xiufeng, Yu Guoqiang*, Room temperature field-free switching of perpendicular magnetization through spin-orbit torque originating from low-symmetry type II Weyl semimetal. Science Advances 9, eadg9819 (2023) doi.org/10.1126/sciadv.adg9819 (link)

225. Rui Zhu*, Huili Liang, Shangfeng Liu, Ye Yuan, Xinqiang Wang, Francis Chi-Chung Ling, Andrej Kuznetsov, Guangyu Zhang, Zengxia Mei*, Non-volatile optoelectronic memory based on a photosensitive dielectric. Nature Communications 14, 5396 (2023) doi.org/10.1038/s41467-023-40938-y (link)

224. Hongjun Xu, Ke Jia, Yuan Huang, Fanqi Meng, Qinghua Zhang, Yu Zhang, Chen Cheng, Guibin Lan, Jing Dong, Jinwu Wei, Jiafeng Feng, Congli He, Zhe Yuan, Mingliang Zhu, Wenqing He, Caihua Wan, Hongxiang Wei, Shouguo Wang, Qiming Shao, Lin Gu, Michael Coey, Youguo Shi, Guangyu Zhang, Xiufeng Han, Guoqiang Yu*, Electrical detection of spin pumping in van der Waals ferromagnetic Cr2Ge2Te6 with low magnetic damping. Nature Communications 14, 3824 (2023) doi.org/10.1038/s41467-023-39529-8 (link)

223. Yangkun Zhang, Boxin Wang, Dongxia Shi, Guangyu Zhang*, Progress in the preparation of high-quality wafer-scale monolayer and multilayer MS2 (M = Mo; W) films by CVD. AIP Advances 13, 110701 (2023) doi.org/10.1063/5.0167225 (link)

222. Mengzhou Liao*, Andrea Silva*, Luojun Du, Paolo Nicolini, Victor E. P. Claerbout, Denis Kramer, Rong Yang, Dongxia Shi, Tomas Polcar, and Guangyu Zhang*, Twisting Dynamics of Large Lattice-Mismatch van der Waals Heterostructures. ACS Appl. Mater. Interfaces 15, 19616-19623 (2023) doi.org/10.1021/acsami.3c00558 (link)

221. Yalong Yuan, Yanbang Chu, Cheng Hu, Jinpeng Tian, Le Liu, Fanfan Wu, Yiru Ji, Jiaojiao Zhao, Zhiheng Huang, Xiaozhou Zan, Luojun Du, Kenji Watanabe, Takashi Taniguchi, Dongxia Shi, Zhiwen Shi, Wei Yang* and Guangyu Zhang*, Epitaxial growth of trilayer graphene moire superlattice. Chinese Phys. B 32 077304 (2023) doi.org/10.1088/1674-1056/accdc8 (link)

220. Le Liu, Yanbang Chu, Guang Yang, Yalong Yuan, Fanfan Wu, Yiru Ji, Jinpeng Tian, Rong Yang, Kenji Watanabe, Takashi Taniguchi, Gen Long, Dongxia Shi, Jianpeng Liu, Jie Shen, Li Lu, Wei Yang*, Guangyu Zhang*, Quantum oscillations in field-induced correlated insulators of a moire superlattice. Science Bulletin 2, 20220060 (2023) doi.org/10.1016/j.scib.2023.05.006 (link)

219. Zhiheng Huang#, Yuhui Li#, Tao Bo#, Yanchong Zhao, Fanfan Wu, Lu Li, Yalong Yuan, Yiru Ji, Le Liu, Jinpeng Tian, Yanbang Chu, Xiaozhou Zan, Yalin Peng, Xiuzhen Li, Yangkun Zhang, Kenji Watanabe, Takashi Taniguchi, Zhipei Sun, Wei Yang, Dongxia Shi, Shixuan Du*, Luojun Du*, Guangyu Zhang*, Real- and momentum-indirect neutral and charged excitons in a multi-valley semiconductor. National Science Open 2, 20220060 (2023) doi.org/10.1360/nso/20220060 (link)

218. Xue Guodong, Sui Xin, Yin Peng, Zhou Ziqi, Li Xiuzhen, Cheng Yang, Guo Quanlin, Zhang Shuai, Wen Yao, Zuo Yonggang, Zhao Chong, Wu Muhong, Gao Peng, Li Qunyang, He Jun, Wang Enge, Zhang Guangyu, Liu Can, Liu Kaihui*, Modularized batch production of 12-inch transition metal dichalcogenides by local element supply. Science Bulletin 68, 1514-1521 (2023) doi.org/10.1016/j.scib.2023.06.037 (link)

217. Tiantian Zhang*, Zhiheng Huang, Zitian Pan, Luojun Du*, Guangyu Zhang, and Shuichi Murakami*, Weyl Phonons in Chiral Crystals. Nano Lett. 23, 7561-7567 (2023) doi.org/10.1021/acs.nanolett.3c02132 (link)

216. Le Liu, Xin Lu, Yanbang Chu, Guang Yang, Yalong Yuan, Fanfan Wu, Yiru Ji, Jinpeng Tian, Kenji Watanabe, Takashi Taniguchi, Luojun Du, Dongxia Shi, Jianpeng Liu, Jie Shen, Li Lu, Wei Yang*, and Guangyu Zhang*, Observation of First-Order Quantum Phase Transitions and Ferromagnetism in Twisted Double Bilayer Graphene. Phys. Rev. X 13, 031015 (2023) doi.org/10.1103/PhysRevX.13.031015 (link)

215. Jian Tang, Qinqin Wang, Jinpeng Tian, Xiaomei Li, Na Li, Yalin Peng, Xiuzhen Li, Yanchong Zhao, Congli He, Shuyu Wu, Jiawei Li, Yutuo Guo, Biying Huang, Yanbang Chu, Yiru Ji, Dashan Shang, Luojun Du, Rong Yang, Wei Yang, Xuedong Bai, Dongxia Shi & Guangyu Zhang*, Low power flexible monolayer MoS2 integrated circuits. Nature Communications 14, 1, 3633 (2023) doi.org/10.1038/s41467-023-39390-9 (link)

214. Jinpeng Tian, Qinqin Wang, Xudan Huang, Jian Tang, Yanbang Chu, Shuopei Wang, Cheng Shen, Yancong Zhao, Na Li, Jieying Liu, Yiru Ji, Biying Huang, Yalin Peng, Rong Yang, Wei Yang, Kenji Watanabe, Takashi Taniguchi, Xuedong Bai, Dongxia Shi, Luojun Du*, and Guangyu Zhang*, Scaling of MoS2 Transistors and Inverters to Sub-10 nm Channel Length with High Performance. Nano Letters 23, 7, 2764-2770 (2023) doi.org/10.1021/acs.nanolett.3c00031 (link)

213. Luojun Du*, Maciej R. Molas, Zhiheng Huang, Guangyu Zhang*, Feng Wang and Zhipei Sun*, Moiré photonics and optoelectronics. Science 379, 6639 (2023) doi.org/10.1126/science.adg0014 (link)

212. Fanfan Wu, Lu Li, Qiaoling Xu, Le Liu, Yalong Yuan, Jiaojiao Zhao, Zhiheng Huang, Xiaozhou Zan, Kenji Watanabe, Takashi Taniguchi, Dongxia Shi, Lede Xian, Wei Yang, Luojun Du* and Guangyu Zhang*, Coupled Ferroelectricity and Correlated States in a Twisted Quadrilayer MoS2 Moiré Superlattice. Chin. Phys. Lett 40, 4, 047303 (2023) doi.org/10.1088/0256-307X/40/4/047303 (link)

211. Renzhong Zhuang, Songhua Cai, Zengxia Mei, Huili Liang, Ningjiu Zhao, Haoran Mu, Wenzhi Yu, Yan Jiang, Jian Yuan, Shuping Lau, Shiming Deng, Mingyue Han, Peng Jin, Cailin Wang, Guangyu Zhang* and Shenghuang Lin*, Solution-grown BiI/BiI3 van der Waals heterostructures for sensitive X-ray detection. Nature Communications 14, 1, 1621 (2023) doi.org/10.1038/s41467-023-37297-z (link)

210. Peiming Zheng, Wenya Wei, Zhihua Liang, Biao Qin, Jinpeng Tian, Jinhuan Wang, Ruixi Qiao, Yunlong Ren, Junting Chen, Chen Huang, Xu Zhou, Guangyu Zhang, Zhilie Tang, Dapeng Yu, Feng Ding*, Kaihui Liu*, Universal epitaxy of non-centrosymmetric two-dimensional single-crystal metal dichalcogenides. Nature Communications 14, 1, 592 (2023) doi.org/10.1038/s41467-023-36286-6 (link)

209. Na Li, Qinqin Wang, Congli He*, Jiawei Li, Xiuzhen Li, Cheng Shen, Biying Huang, Jian Tang, Hua Yu, Shuopei Wang, Luojun Du, Wei Yang, Rong Yang, Dongxia Shi, and Guangyu Zhang*, 2D Semiconductor Based Flexible Photoresponsive Ring Oscillators for Artificial Vision Pixels. ACS Nano 17, 2, 991–999 (2023) doi.org/10.1021/acsnano.2c06921 (link)

回到顶层

2022

208. Baoshan Cui†, Zengtai Zhu†, Chuangwen Wu†, Xiaobin Guo, Zhuyang Nie, Hao Wu*, Tengyu Guo, Peng Chen, Dongfeng Zheng, Tian Yu, Li Xi, Zhongming Zeng, Shiheng Liang, Guangyu Zhang, Guoqiang Yu* and Kang L. Wang, Comprehensive Study of the Current-Induced Spin–Orbit Torque Perpendicular Effective Field in Asymmetric Multilayers. Nanomaterials 12, 11, 1887 (2022) doi.org/10.3390/nano12111887 (link)

207. Zihan Yan, Hao Yang, Zhuo Yang, Chengao Ji, Guangyu Zhang, Yusong Tu*, Guangyu Du*, Songhua Cai* and Shenghuang Lin*, Emerging Two-Dimensional Tellurene and Tellurides for Broadband Photodetectors. Small 18, 20, 2200016 (2022) doi.org/10.1002/smll.202200016 (link)

206. Wenzhi Yu, Kaiwen Gong, Yanyong Li, Binbin Ding, Lei Li, Yongkang Xu, Rong Wang, Lianbi Li*, Guangyu Zhang* and Shenghuang Lin*, Flexible 2D Materials beyond Graphene: Synthesis, Properties, and Applications. Small 18, 14, 2105383 (2022) doi.org/10.1002/smll.202105383 (link)

205. Yonggang Zuo, Can Liu*, Liping Ding, Ruixi Qiao, Jinpeng Tian, Chang Liu, Qinghe Wang, Guodong Xue, Yilong You, Quanlin Guo, Jinhuan Wang, Ying Fu, Kehai Liu, Xu Zhou, Hao Hong, Muhong Wu, Xiaobo Lu, Rong Yang, Guangyu Zhang, Dapeng Yu, Enge Wang, Xuedong Bai*, Feng Ding* and Kaihui Liu*, Robust growth of two-dimensional metal dichalcogenides and their alloys by active chalcogen monomer supply. Nature Communications 13, 1 (2022) doi.org/10.1038/s41467-022-28628-7 (link)

204. Haoran Mu*, Wenzhi Yu, Jian Yuan, Shenghuang Lin*, Guangyu Zhang*, Interface and surface engineering of black phosphorus: a review for optoelectronic and photonic applications. Materials Futures 1, 1, 012301 (2022) doi.org/10.1088/2752-5724/ac49e3 (link)

203. Li Lu, Zhang Yang-Kun, Shi Dong-Xia*, Zhang Guang-Yu*, Cotrollable growth of monolayer MoS2 films and their applications in devices. Acta Phys. Sin. 71, 10, 108102 (2022) doi.org/10.7498/aps.71.20212447(link)

202. Jiawei Li, Shuopei Wang*, Lu Li, Zheng Wei, Qinqin Wang, Huacong Sun, Jinpeng Tian, Yutuo Guo, Jieying Liu, Hua Yu, Na Li, Gen Long, Xuedong Bai, Wei Yang, Rong Yang, Dongxia Shi, Guangyu Zhang*, Chemical Vapor Deposition of 4 Inch Wafer-Scale Monolayer MoSe2. Small Science 2, 11, 2200062 (2022) doi.org/10.1002/smsc.202200062(link)

201. Jiahao Yuan†, Mengzhou Liao†, Zhiheng Huang, Jinpeng Tian, Yanbang Chu, Luojun Du, Wei Yang, Dongxia Shi, Rong Yang* and Guangyu Zhang*, Precisely controlling the twist angle of epitaxial MoS2/graphene heterostructure by AFM tip manipulation. Chin. Phys. B 31, 8, 087302 (2022) doi.org/10.1088/1674-1056/ac720e(link)

200. Biying Huang, Na Li*, Qinqin Wang, Chen Ouyang, Congli He, Lianchang Zhang, Luojun Du, Wei Yang, Rong Yang, Dongxia Shi and Guangyu Zhang*, Optoelectronic Synapses Based on MoS2 Transistors for Accurate Image Recognition. Advanced Materials Interfaces 9, 32, 2201558 (2022) doi.org/10.1002/admi.202201558(link)

199. Yutuo Guo, Qinqin Wang, Xiaomei Li, Zheng Wei, Lu Li, Yalin Peng, Wei Yang, Rong Yang, Dongxia Shi, Xuedong Bai, Luojun Du and Guangyu Zhang*, Direct visualization of structural defects in 2D semiconductor. Chin. Phys. B 31, 076105 (2022) doi.org/10.1088/1674-1056/ac6738(link) Highlighted by physics world

198. Yanbang Chu, Le Liu, Cheng Shen, Jinpeng Tian, Jian Tang, Yanchong Zhao, Jieying Liu, Yalong Yuan, Yiru Ji, Rong Yang, Kenji Watanabe, Takashi Taniguchi, Dongxia Shi, Fengcheng Wu, Wei Yang*, and Guangyu Zhang*, Temperature-linear resistivity in twisted double bilayer graphene. Phys. Rev. B 106, 3, 035107 (2022) doi.org/10.1103/PhysRevB.106.035107(link)

197. Fanfan Wu, Yiru Ji, Wei Yang* and Guangyu Zhang, Experimental research progress of electronic band structure and low temperature transport based on molybdenum disulfide. Acta Phys. Sin. 71, 12, 20220015 (2022) doi.org/article/10.7498/aps.71.20220015(link)

196. Tiancong Zhu, Wei Ruan*, Yan-Qi Wang, Hsin-Zon Tsai, Shuopei Wang, Canxun Zhang, Tianye Wang, Franklin Liou, Kenji Watanabe, Takashi Taniguchi, Jeffrey B. Neaton, Alexander Weber-Bargioni, Alex Zettl, Z. Q. Qiu, Guangyu Zhang, Feng Wang*, Joel E. Moore* and Michael F. Crommie*, Imaging gate-tunable Tomonaga–Luttinger liquids in 1H-MoSe2 mirror twin boundaries. Nature Materials 21, 748 (2022) doi.org/10.1038/s41563-022-01277-3(link)

195. Le Liu, Shihao Zhang, Yanbang Chu, Cheng Shen, Yuan Huang, Yalong Yuan, Jinpeng Tian, Jian Tang, Yiru Ji, Rong Yang, Kenji Watanabe, Takashi Taniguchi, Dongxia Shi, Jianpeng Liu, Wei Yang* and Guangyu Zhang*, Isospin competitions and valley polarized correlated insulators in twisted double bilayer graphene. Nature Communications 13, 1 (2022) doi.org/10.1038/s41467-022-30998-x(link)

194. Jinpeng Tian, Yalin Peng, Qinqin Wang, Yanbang Chu, Zhiheng Huang, Na Li, Xiuzhen Li, Jian Tang, Biying Huang, Rong Yang, Luojun Du, Wei Yang, Dongxia Shi, and Guangyu Zhang*, Rail-to-Rail MoS2 Inverters. ACS Appl. Electron. Mater. 4, 6, 2636 (2022) doi.org/10.1021/acsaelm.2c00444(link)

193. Jiawei Li, Na Li*, Qinqin Wang, Zheng Wei, Congli He, Dashan Shang, Yutuo Guo, Woyu Zhang, Jian Tang, Jieying Liu, Shuopei Wang, Wei Yang, Rong Yang, Dongxia Shi, Guangyu Zhang*, Highly Stretchable MoS2-Based Transistors with Opto-Synaptic Functionalities. Advanced Electronic Materials 8, 9, 2200238 (2022) doi.org/10.1002/aelm.202200238(link)

192. Jieying Liu, Jian Tang, Jiaojiao Zhao, Yanchong Zhao, Cheng Shen, Mengzhou Liao, Shuopei Wang, Jinpeng Tian, Yanbang Chu, Jiawei Li, Zheng Wei, Gen Long*, Wei Yang, Rong Yang, Na Li*, Dongxia Shi and Guangyu Zhang*, Hot-Pressed Two-Dimensional Amorphous Metals and Their Electronic Properties. Crystals 12, 5, 616 (2022) doi.org/10.3390/cryst12050616 (link)

191. Qinqin Wang†, Jian Tang†, Xiaomei Li, Jinpeng Tian, Jing Liang, Na Li, Depeng Ji, Lede Xian, Yutuo Guo, Lu Li, Qinghua Zhang, Yanbang Chu, Zheng Wei, Yanchong Zhao, Luojun Du, Hua Yu, Xuedong Bai, Lin Gu, Kaihui Liu, Wei Yang, Rong Yang, Dongxia Shi, Guangyu Zhang*, Layer-by-layer epitaxy of multilayer MoS2 wafers. National Science Review 9, 6, nwac077 (2022) doi.org/10.1093/nsr/nwac077 (link)

190. Yiru Ji, Yanbang Chu, Aomiao Zhi, Jinpeng Tian, Jian Tang, Le Liu, Fanfan Wu, Yalong Yuan, Rong Yang, XueZeng Tian, Dongxia Shi, Xuedong Bai, Wei Yang*, and Guangyu Zhang*, Enhanced critical field and anomalous metallic state in two-dimensional centrosymmetric 1T‘-WS2. Phys. Rev. B 105, 16, L161402 (2022) doi.org/10.1103/PhysRevB.105.L161402(link)

189. Na Li, Congli He*, Qinqin Wang, Jianshi Tang, Qingtian Zhang, Cheng Shen, Jian Tang, Heyi Huang, Shuopei Wang, Jiawei Li, Biying Huang, Zheng Wei, Yutuo Guo, Jiahao Yuan, Wei Yang, Rong Yang, Dongxia Shi and Guangyu Zhang*, Gate-tunable large-scale flexible monolayer MoS2 devices for photodetectors and optoelectronic synapses. Nano Res. 15, 5418 (2022) doi.org/10.1007/s12274-022-4122-z(link)

188. Yu Wang†, Linlu Wu†, Zheng Wei, Zijia Liu, Peng Cheng, Yiqi Zhang, Baojie Feng, Guangyu Zhang, Wei Ji*, Kehui Wu*, and Lan Chen*,Real-space detection and manipulation of two-dimensional quantum well states in few-layer MoS2. Phys. Rev. B 105, 8, L081404 (2022) doi.org/10.1103/PhysRevB.105.L081404(link)

187. Bo Su†, Yuan Huang†, Yan Hui Hou, Jiawei Li, Rong Yang, Yongchang Ma, Yang Yang, Guangyu Zhang, Xingjiang Zhou, Jianlin Luo, Zhi-Guo Chen*,Persistence of Monoclinic Crystal Structure in 3D Second-Order Topological Insulator Candidate 1T′-MoTe2 Thin Flake Without Structural Phase Transition. Advanced Science 9, 5, 2101532 (2022) doi.org/10.1002/advs.202101532(link)

186. Jinhuan Wang†, Xiaozhi Xu† , Ting Cheng†, Lehua Gu†  , Ruixi Qiao, Zhihua Liang,Dongdong Ding, Hao Hong, Peiming Zheng, Zhibin Zhang  , Zhihong Zhang  , Shuai Zhang  ,Guoliang Cui, Chao Chang3, Chen Huang, Jiajie Qi, Jing Liang, Can Liu  , Yonggang Zuo  ,Guodong Xue, Xinjie Fang, Jinpeng Tian, Muhong Wu  , Yi Guo, Zhixin Yao, Qingze Jiao,Lei Liu, Peng Gao, Qunyang Li  , Rong Yang  , Guangyu Zhang  , Zhilie Tang, Dapeng Yu,Enge Wang, Jianming Lu  , Yun Zhao*, Shiwei Wu  *, Feng Ding  * and Kaihui Liu *,Dual-coupling-guided epitaxial growth of wafer-scale single-crystal WS2 monolayer on vicinal a-plane sapphire. Nature Nanotechnology 17, 1, 33 (2022) doi.org/10.1038/s41565-021-01004-0(link)

185. Yanchong Zhao, Luojun Du*, Shiqi Yang, Jinpeng Tian, Xiaomei Li, Cheng Shen, Jian Tang, Yanbang Chu, Kenji Watanabe, Takashi Taniguchi, Rong Yang, Dongxia Shi, Zhipei Sun, Yu Ye*, Wei Yang*, and Guangyu Zhang*,Interlayer exciton complexes in bilayer MoS2. Phys. Rev. B 105, 4, L041411 (2022) doi.org/10.1103/PhysRevB.105.L041411(link)

184. Zhiheng Huang†, Yanchong Zhao†, Tao Bo†, Yanbang Chu, Jinpeng Tian, Le Liu, Yalong Yuan, Fanfan Wu, Jiaojiao Zhao, Lede Xian, Kenji Watanabe, Takashi Taniguchi, Rong Yang, Dongxia Shi, Luojun Du*, Zhipei Sun, Sheng Meng*, Wei Yang*, and Guangyu Zhang*,Spatially indirect intervalley excitons in bilayer WSe2. Phys. Rev. B 105, 4, L041409 (2022) doi.org/10.1103/PhysRevB.105.L041409(link)

回到顶层

2021

183. Jianqi Zhu,Rong Yang,Guangyu Zhang*, Atomically thin transition metal dichalcogenides for the hydrogen evolution reaction.ChemPhysMater. 1, 2, 102 (2022) doi.org/10.1016/j.chphma.2021.11.005(link)

182. Di Chen,Jiankun Li,Zheng Wei,Xinjian Wei,Maguang Zhu,Jing Liu,Guangyu Zhang,Zhiyong Zhang,Jian-Hao Chen*, Repairable Polymer Solid Electrolyte Gated MoS2 Field Effect Devices with Large Radiation Tolerance.Advanced Electronic Materials. 8, 1, 2100619 (2022). doi.org/10.1002/aelm.202100619(link)

181. Duan Luo, Jian Tang, Xiaozhe Shen,* Fuhao Ji, Jie Yang, Stephen Weathersby, Michael E. Kozina, Zhijiang Chen, Jun Xiao, Yusen Ye, Ting Cao, Guangyu Zhang,* Xijie Wang,* and Aaron M. Lindenberg*, Twist-Angle-Dependent Ultrafast Charge Transfer in MoS2‑Graphene van der Waals Heterostructures .Nano Lett. 21, 19, 8051 (2021). doi.org/10.1021/acs.nanolett.1c02356 (link)

180. Jianyu Du† , Donggang Xie†, Qinghua Zhang , Hai Zhong , Fanqi Meng , Xingke Fu ,Qinchao Sun , Hao Ni , Tao Li , Er-jia Guo , Haizhong Guo , Meng He , Can Wang ,Lin Gu , Xiulai Xu , Guangyu Zhang , Guozhen Yang , Kuijuan Jin *, Chen Ge *, A robust neuromorphic vision sensor with optical control of ferroelectric switching. Nano Energy 89, 106439 (2021) doi.org/10.1016/j.nanoen.2021.106439 (link)

179. Luojun Du†*, Yanchong Zhao†, Linlu Wu†, Xuerong Hu†, Lide Yao, Yadong Wang, Xueyin Bai, Yunyun Dai, Jingsi Qiao, Md Gius Uddin, Xiaomei Li, Jouko Lahtinen, Xuedong Bai, Guangyu Zhang, Wei Ji* , Zhipei Sun*, Giant anisotropic photonics in the 1D van der Waals semiconductor fibrous red phosphorus. Nature Communications 12, 1, 1 (2021). doi.org/10.1038/s41467-021-25104-6 (link)

178. Mengzhou Liao, Paolo Nicolini, Luojun Du, Jiahao Yuan, Shuopei Wang, Hua Yu, Jian Tang, Peng Cheng, Kenji Watanabe, Takashi Taniguchi, Lin Gu, Victor E. P. Claerbout, Andrea Silva, Denis Kramer, Tomas Polcar, Rong Yang, Dongxia Shi, Guangyu Zhang*, UItra-low friction and edge-pinning effect in large-lattice-mismatch van der Waals heterostructures. Nature Materials 21, 1, 47 (2022). doi.org/10.1038/s41563-021-01058-4 (link)

177. Yiru Ji,Yanbang Chu, Lede Xian*, Wei Yang*, Guangyu Zhang, From magic angle twisted bilayer graphene to moiré superlattice quantum simulator. Acta Phys. Sin. 70, 11, 118101 (2021). doi: 10.7498/aps.70.20210476 (link)

176. Songge Zhang†, Yutong Chen†, Ning Wang, Yang Chai, Gen Long*, Guangyu Zhang*, Probe and manipulation of magnetism of two-dimensional CrI3 crystal. Acta Phys. Sin. 70, 12, 127504 (2021). doi: 10.7498/aps.70.20202197 (link)

175. Jiahao Yuan, Rong Yang* ,and Guangyu Zhang*, Structural Superlubricity in 2D van der Waals Heterojunctions. Nanotechnology. 33, 10, 102002 (2021). doi.org/10.1088/1361-6528/ac1197 (link)

174. Jing Zhao†*, Zheng Wei†, Zhongyi Li, Jinran Yu, Jian Tang, Guangyu Zhang, and Zhonglin Wang*, Skin-Inspired High-Performance Active-matrix Circuitry for Multimodal User-Interaction. Adv. Funct. Mater. 31, 38, 2105480 (2021). doi.org/10.1002/adfm.202105480 (link)

173. Yu Zhang†, Hongjun Xu†, Changjiang Yi†, Xiao Wang, Yuan Huang, Jian Tang, Jialiang Jiang, Congli He, Mingkun Zhao, Tianyi Ma, Jing Dong, Chenyang Guo, Jiafeng Feng, Caihua Wan, Hongxiang Wei, Haifeng Du, Youguo Shi*, Guoqiang Yu*, Guangyu Zhang, and Xiufeng Han, Exchange bias and spin–orbit torque in the Fe3GeTe2-based heterostructures prepared by vacuum exfoliation approach.Appl. Phys. Lett. 118, 262406 (2021). doi.org/10.1063/5.0050483 (link)

172. Zheng Wei†, Jian Tang†, Xuanyi Li, Zhen Chi, Yu Wang, Qinqin Wang, Bo Han, Na Li, Biying Huang, Jiawei Li, Hua Yu, Jiahao Yuan, Hailong Chen, Jiatao Sun, Lan Chen, Kehui Wu, Peng Gao, Congli He, Wei Yang, Dongxia Shi, Rong Yang*, and Guangyu Zhang*, Wafer‐Scale Oxygen‐Doped MoS2 Monolayer.Small methods 5, 2100091 (2021). doi:10.1002/smtd.202100091 (link)Cover

171. Jian Tang†, Congli He†,* Jianshi Tang, Kun Yue, Qingtian Zhang, Yizhou Liu, Qinqin Wang, Shuopei Wang, Na Li, Cheng Shen, Yanchong Zhao, Jieying Liu, Jiahao Yuan, Zheng Wei, Jiawei Li, Kenji Watanabe, Takashi Taniguchi, Dashan Shang, Shouguo Wang, Wei Yang, Rong Yang, Dongxia Shi, and Guangyu Zhang*, A Reliable All‐2D Materials Artificial Synapse for High Energy‐Efficient Neuromorphic Computing.Adv. Funct. Mater. 2011083 (2021). doi:10.1002/adfm.202011083 (link)Cover

170. Yanchong Zhao†, Tao Bo†, Luojun Du, Jinpeng Tian, Xiaomei Li, Kenji Watanabe, Takashi Taniguchi, Rong Yang, Dongxia Shi*, Sheng Meng, Wei Yang*, and Guangyu Zhang*, Thermally induced band hybridization in bilayer-bilayer MoS2/WS2 heterostructure. Chin. Phys. B 30, 5, 057801 (2021). doi:10.1088/1674-1056/abeee3 (link)

169. Cheng Shen, Jianghua Ying, Le Liu, Jianpeng Liu, Na Li, Shuopei Wang, Jian Tang, Yanchong Zhao, Yanbang Chu, Kenji Watanabe, Takashi Taniguchi, Rong Yang, Dongxia Shi, Fanming Qu, Li Lu, Wei Yang*, and Guangyu Zhang*, Emergence of Chern Insulating States in Non-Magic Angle Twisted Bilayer Graphene. Chin. Phys. Lett. 38, 4, 047301 (2021). doi:10.1088/0256-307X/38/4/047301 (link)

168. Sheng Meng*, Linan Meng, Na Xin, jingying Wang, Jiyu Xu, Shizhao Ren, Zhuang Yan, Miao Zhang, Cheng Shen, Guangyu Zhang, Xuefeng Guo, Atomically Precise Engineering of Single‐Molecule Stereoelectronic Effect. Angew. Chem. Int. Ed.60, 12274 (2021). doi:10.1002/anie.202100168 (link)

167. Congli He, Hongjun Xu, Jian Tang, Xiao Wang, Jinwu Wei, Shipeng Shen, Qingqiang Chen, Qiming Shao, Guoqiang Yu, Guangyu Zhang, Shouguo Wang, Spin-orbit torques based on two-dimensional materials. Acta Physica Sinica.70, 12, 127501 (2021). doi:10.7498/aps.70.20210004 (link)

166. Baoshan Cui, Dongxing Yu, Ziji Shao, Yizhou Liu, Hao Wu, Pengfei Nan, Zengtai Zhu, Chuangwen Wu, Tengyu Guo, Peng Chen, Heng‐An Zhou, Li Xi, Wanjun Jiang, Hao Wang, Shiheng Liang, Haifeng Du, Kang L. Wang, Wenhong Wang, Kehui Wu, Xiufeng Han, Guangyu Zhang, Hongxin Yang*, Guoqiang Yu*, Néel‐Type Elliptical Skyrmions in a Laterally Asymmetric Magnetic Multilayer. Adv. Mater. 33, 2006924 (2021). doi: 10.1002/adma.202006924 (link)

165. Zhen Chi, Xiang Zhang, Xiewen Wen, Junfeng Han, Zheng Wei, Luojun Du, Jiawei Lai, Xiangzhuo Wang, Guangyu Zhang, Qing Zhao, Hailong Chen*, Pulickel M. Ajayan*, and Yu-Xiang Weng, Determining Quasiparticle Bandgap of Two-Dimensional Transition Metal Dichalcogenides by Observation of Hot Carrier Relaxation Dynamics. J. Phys. Chem. Lett.12, 585 (2021). doi: 10.1021/acs.jpclett.0c03414 (link)

164. Jing Zhao, ZhengWei, XixiYang, GuangyuZhang, ZhonglinWang*, Mechanoplastic Tribotronic Two-Dimensional Multibit Nonvolatile Optoelectronic Memory. Nano energy 82, 105692 (2021). doi: 10.1016/j.nanoen. 2020.105692 (link)

回到顶层

2020

163. Kyunghoon Lee†, M. Iqbal Bakti Utama†, Salman Kahn†, Appalakondaiah Samudrala, Nicolas Leconte, Birui Yang, Shuopei Wang, Kenji Watanabe, Takashi Taniguchi, M. Virginia P. Altoé, Guangyu Zhang, Alexander Weber-Bargioni, Michael Crommie, Paul D. Ashby, Jeil Jung, Feng Wang*, Alex Zettl*, Ultrahigh-resolution scanning microwave impedance microscopy of moiré lattices and superstructures. Sci. adv.6, 50, eabd1919 (2020). doi: 10.1126/sciadv.abd1919 (link)

162. Yanchong Zhao, Luojun Du*, Wei Yang, Cheng Shen, Jian Tang, Xiaomei Li, Yanbang Chu, Jinpeng Tian, Kenji Watanabe, Takashi Taniguchi, Rong Yang, Dongxia Shi, Zhipei Sun, and Guangyu Zhang*, Observation of logarithmic Kohn anomaly in monolayer graphene. Phys. Rev. B 102, 165415 (2020). doi: 10.1103/PhysRevB.102.165415 (link)

161. Jian Tang, Qinqin Wang, Zheng Wei, Cheng Shen, Xiaobo Lu, Shuopei Wang, Yanchong Zhao, Jieying Liu, Na Li, Yanbang Chu, Jinpeng Tian, Fanfan Wu, Wei Yang, Congli He, Rong Yang, Dongxia Shi, Kenji Watanabe, Takashi Taniguchi, and Guangyu Zhang*, Vertical Integration of 2D Building Blocks for All-2D Electronics. Advanced Electronic Materials 6, 2000550 (2020). doi: 10.1002/aelm.202000550 (link)Cover

160. Na Li†, Qinqin Wang†, Cheng Shen, Zheng Wei, Hua Yu, Jing Zhao, Xiaobo Lu, Guole Wang, Congli He, Li Xie, Jianqi Zhu, Luojun Du, Rong Yang*, Dongxia Shi and Guangyu Zhang*, Large-scale flexible and transparent electronics based on monolayer molybdenum disulfide field-effect transistors. Nature Electronics 3, 711 (2020). doi: 10.1038/s41928-020-00475-8 (link)

159. Jian Tang†, Zheng Wei†, Qinqin Wang, Yu Wang, Bo Han, Xiaomei Li, Biying Huang, Mengzhou Liao, Jieying Liu, Na Li, Yanchong Zhao, Cheng Shen, Yutuo Guo, Xuedong Bai, Peng Gao, Wei Yang, Lan Chen, Kehui Wu, Rong Yang*, Dongxia Shi, and Guangyu Zhang*, In Situ Oxygen Doping of Monolayer MoS2 for Novel Electronics. Small 16, 2004276 (2020). doi: 10.1002/smll.202004276 (link)Cover

158. Yanbang Chu, Le Liu, Yalong Yuan, Cheng Shen, Rong Yang, Dongxia Shi, Wei Yang* and Guangyu Zhang*, A Review of Experimental Advances in Twisted Graphene Moiré Superlattice. Chin. Phys. B 29, 12, 128104 (2020). doi: 10.1088/1674-1056/abb221 (link)

157. Zheng Wei, Qinqin Wang, Lu Li, Rong Yang, and Guangyu Zhang*, Monolayer MoS2 epitaxy. Nano Research. 14, 6, 1598 (2021). doi: 10.1007/s12274-020-3019-y (link)

156. Qinqin Wang, Na Li, Jian Tang, Jianqi Zhu, Qinghua Zhang, Qi Jia, Ying Lu, Zheng Wei, Hua Yu, Yanchong Zhao, Yutuo Guo, Lin Gu, Gang Sun, Wei Yang, Rong Yang, Dongxia Shi, and Guangyu Zhang*, Wafer-scale Highly Oriented Monolayer MoS2 with Large Domain Sizes. Nano Lett. 20, 7193 (2020). doi: 10.1021/acs.nanolett.0c02531 (link)

155. Zheng Wei, Mengzhou Liao, Yutuo Guo, Jian Tang, Yongqing Cai, Hanyang Chen, Qinqin Wang, Qi Jia, Ying Lu, yanchong zhao, Jieying Liu, Yanbang Chu, Hua Yu, Na Li, Jiahao Yuan, Biying Huang, Cheng Shen, R Yang, Dongxia Shi and Guangyu Zhang*, Scratching Lithography for Wafer-Scale MoS2 Monolayers. 2D Materials 7, 4, 045028 (2020). doi: 10.1088/2053-1583/aba99f (link)

154. Hailan Luo†, Xuanyi Li†, Yanchong Zhao†, Rong Yang, Lihong Bao, Yufeng Hao, Yu-nan Gao, Norman N. Shi, Yang Guo, Guodong Liu, Lin Zhao, Qingyan Wang, Zhongshan Zhang, Guangyu Zhang, Jiatao Sun*, Yuan Huang*, Hongjun Gao, and Xingjiang Zhou*, Simultaneous generation of direct- and indirect-gap photoluminescence in multilayer MoS2 bubbles. Phys. Rev. Materials 4, 074006 (2020). doi: 10.1103/PhysRevMaterials.4.074006 (link)

153. Yunyun Dai*, Yadong Wang, Susobhan Das, Hui Xue, Xueyin Bai, Eero Hulkko, Guangyu Zhang, Xiaoxia Yang, Qing Dai, and Zhipei Sun*, Electrical Control of Interband Resonant Nonlinear Optics in Monolayer MoS2. ACS nano 14, 7, 8442 (2020). doi: 10.1021/acsnano.0c02642 (link)

152. Xiaobo Lu†,* Jian Tang†, John R. Wallbank, Shuopei Wang, Cheng Shen, Shuang Wu, Peng Chen, Wei Yang, Jing Zhang, Kenji Watanabe, Takashi Taniguchi, Rong Yang, Dongxia Shi, Dmitri K. Efetov, Vladimir I. Fal’ko, and Guangyu Zhang*, High-order minibands and interband Landau level reconstruction in graphene moiré superlattices. Phys. Rev. B 102, 045409 (2020). doi: 10.1103/PhysRevB.102.045409 (link)

151. Na Xin, Xianghua Kong, Yu‐Peng Zhang, Chuancheng Jia, Lei Liu, Yao Gong, Weining Zhang, Shuopei Wang, Guangyu Zhang, Hao‐Li Zhang*, Hong Guo*, Xuefeng Guo*, Control of Unipolar/Ambipolar Transport in Single-Molecule Transistors through Interface Engineering. Advanced Electronic Materials 6, 1901237 (2020). doi: 10.1002/aelm.201901237 (link)

150. Cheng Shen, Yanbang Chu, QuanSheng Wu, Na Li, Shuopei Wang, Yanchong Zhao, Jian Tang, Jieying Liu, Jinpeng Tian, Kenji Watanabe, Takashi Taniguchi, Rong Yang, Zi Yang Meng, Dongxia Shi, Oleg V. Yazyev and Guangyu Zhang*, Correlated states in twisted double bilayer graphene. Nature Physics 16, 520 (2020). doi:10.1038/s41567-020-0825-9 (link)

149. Jia Li†, Xiangdong Yang†, Yang Liu†, Bolong Huang†, Ruixia Wu, Zhengwei Zhang, Bei Zhao, Huifang Ma, Weiqi Dang, Zheng Wei, Kai Wang, Zhaoyang Lin, Xingxu Yan, Mingzi Sun, Bo Li, Xiaoqing Pan, Jun Luo, Guangyu Zhang, Yuan Liu, Yu Huang, Xidong Duan* and Xiangfeng Duan*, General synthesis of two-dimensional van der Waals heterostructure arrays. Nature 579, 368 (2020). doi:10.1038/s41586-020-2098-y (link)

148. Mengzhou Liao†, Zheng Wei†, Luojun Du†, Qinqin Wang, Jian Tang, Hua Yu, Fanfan Wu, Jiaojiao Zhao, Xiaozhi Xu, Bo Han, Kaihui Liu, Peng Gao, Tomas Polcar, Zhipei Sun, Dongxia Shi, Rong Yang* and Guangyu Zhang*, Precise control of the interlayer twist angle in large scale MoS2 homostructures. Nature Communications 11, 2153 (2020). doi:10.1038/s41467-020-16056-4 (link)

147. Jian-Ling Meng†,* Zheng Wei†, Jian Tang, Yanchong Zhao, QinqinWang, JinpengTian, RongYang, GuangyuZhang and Dongxia Shi*, Employing defected monolayer MoS2 as charge storage materials. Nanotechnology 31, 235710 (2020). doi:10.1088/1361-6528/ab7c47 (link)

146. Congli He†, Jian Tang†, Da-Shan Shang†, Jianshi Tang, Yue Xi, Shuopei Wang, Na Li, Qingtian Zhang, Jikai Lu, Zheng Wei, Qinqin Wang, Cheng Shen, Jiawei Li, Shipeng Shen, Jianxin Shen, Rong Yang, Dongxia shi, Huaqiang Wu, Shouguo Wang, Guangyu Zhang*, Artificial synapse based on van der Waals heterostructures with tunable synaptic functions for neuromorphic computing. ACS Appl. Mater. Interfaces 12, 10, 11945 (2020). doi:10.1021/acsami.9b21747 (link)

145. Xiangdong Guo, Ruina Liu, Debo Hu, Hai Hu, Zheng Wei, Rui Wang, Yunyun Dai, Yang Cheng, Ke Chen, Kaihui Liu, Guangyu Zhang, Xing Zhu, Zhipei Sun,* Xiaoxia Yang,* and Qing Dai*, Efficient All-Optical Plasmonic Modulators with Atomically Thin Van Der Waals Heterostructures. Advanced Materials 32, 1907105 (2020). doi: 10.1002/adma.201907105 (link)

回到顶层

2019

144. Xiangzhuo Wang, Huixia Yang, Rong Yang, Qinsheng Wang, Jingchuan Zheng, Lu Qiao, Xianglin Peng, Yongkai Li, Dongyun Chen, Xiaolu Xiong, Junxi Duan, Guangyu Zhang, Jie Ma, Junfeng Han*, Wende Xiao*, and Yugui Yao, Weakened interlayer coupling in two-dimensional MoSe2 flakes with screw dislocations. Nano Research 12, 8, 1900 (2019). doi:10.1007/s12274-019-2456-y (link)

143. Wenjuan Zhao, Yuan Huang, Cheng Shen, Cong Li, Yongqing Cai, Yu Xu, Hongtao Rong, Qiang Gao, Yang Wang, Lin Zhao, Lihong Bao, Qingyan Wang, Guangyu Zhang, Hongjun Gao, Zuyan Xu, Xingjiang Zhou, and Guodong Liu*, Electronic structure of exfoliated millimeter-sized monolayer WSe2 on silicon wafer. Nano Research 12, 12, 3095 (2019). doi:10.1007/s12274-019-2557-7 (link)

142. Xiaobo Lu, Petr Stepanov, Wei Yang, Ming Xie, Mohammed Ali Aamir, Ipsita Das, Carles Urgell, Kenji Watanabe, Takashi Taniguchi, Guangyu Zhang, Adrian Bachtold, Allan H. MacDonald & Dmitri K. Efetov*, Superconductors, orbital magnets and correlated states in magic-angle bilayer graphene. Nature 574, 653 (2019). doi:10.1038/s41586-019-1695-0 (link)

141. Zongyao Li, Yu Xu, Bing Cao, Lin Qi, En Zhao, Song Yang, Chinhua Wang, Jianfeng Wang, Guangyu Zhang and Ke Xu*, The interface of epitaxial nanographene on GaN by PECVD. AIP Advances 9, 095060 (2019). doi:10.1063/1.5111443 (link)

140. Luojun Du, Qian Zhang, Tingting Zhang, Zhiyan Jia, Jing Liang, Gui-Bin Liu, Rong Yang, Dongxia Shi, Jianyong Xiang, Kaihui Liu, Zhipei Sun, Yugui Yao, Qingming Zhang, and Guangyu Zhang*, Robust circular polarization of indirect Q-K transitions in bilayer 3R-WS2. Phys. Rev. B 100, 161404 (2019). doi:10.1103/PhysRevB.100.161404 (link)

139. Luojun Du, Jian Tang, Jing Liang, Mengzhou Liao, Zhiyan Jia, Qinghua Zhang, Yanchong Zhao, Rong Yang, Dongxia Shi, Lin Gu, Jianyong Xiang, Kaihui Liu, Zhipei Sun*, and Guangyu Zhang*, Giant Valley Coherence at Room Temperature in 3R WS2 with Broken Inversion Symmetry. Research 6494565 (2019). doi: 10.34133/2019/6494565 (link)

138. Zhichang Wang†, Xiaoqiang Liu†, Jianqi Zhu†, Sifan You, Ke Bian, Guangyu Zhang*, Ji Feng*, Ying Jiang*, Local engineering of topological phase in monolayer MoS2. Science Bulletin 64, 23, 1750(2019). doi:10.1016/j.scib.2019.10.004 (link)

137. Luojun Du†,* Jian Tang†, Yanchong Zhao†, Xiaomei Li, Rong Yang, Xuerong Hu, Xueyin Bai, Xiao Wang, Kenji Watanabe, Takashi Taniguchi, Dongxia Shi, Guoqiang Yu, Xuedong Bai, Tawfique Hasan, Guangyu Zhang*, Zhipei Sun*, Lattice Dynamics, Phonon Chirality, and Spin–Phonon Coupling in 2D Itinerant Ferromagnet Fe3GeTe2. Adv. Funct. Mater. 29, 1904734 (2019). doi: 10.1002/adfm.201904734 (link)

136. Jing Zhang†, Luojun Du†, Shun Feng†, Run-Wu Zhang, Bingchen Cao, Chenji Zou, Yu Chen, Mengzhou Liao, Baile Zhang, Shengyuan A. Yang, Guangyu Zhang* & Ting Yu*, Enhancing and controlling valley magnetic response in MoS2/WS2 heterostructures by all-optical route. Nature Communications 10, 4226 (2019), doi: 10.1038/s41467-019-12128-2 (link)

135. Xiao Wang†, Jian Tang†, Xiuxin Xia†, Congli He, Junwei Zhang, Yizhou Liu, Caihua Wan, Chi Fang, Chenyang Guo, Wenlong Yang, Yao Guang, Xiaomin Zhang,Hongjun Xu, Jinwu Wei, Mengzhou Liao, Xiaobo Lu, Jiafeng Feng, Xiaoxi Li,Yong Peng, Hongxiang Wei, Rong Yang, Dongxia Shi, Xixiang Zhang, Zheng Han*, Zhidong Zhang, Guangyu Zhang*, Guoqiang Yu*, Xiufeng Han, Current-driven magnetization switching in a van der Waals ferromagnet Fe3GeTe2. Sci. Adv. 5, 8, eaaw8904 (2019). doi: 10.1126/sciadv.aaw8904 (link)

134. Peng Chen, Cai Cheng, Cheng Shen, Jing Zhang, Shuang Wu, Xiaobo Lu, Shuopei Wang, Luojun Du, Kenji Watanabe, Takashi Taniguchi, Jiatao Sun, Rong Yang, Dongxia Shi, Kaihui Liu, Sheng Meng and Guangyu Zhang*, Band evolution of two-dimensional transition metal dichalcogenides under electric fields. Appl. Phys. Lett. 115, 083104 (2019). doi: 10.1063/1.5093055 (link)

133. Ruilong Yang†, Lixuan Liu†, Shanghuai Feng†, Yujie Liu, Songlin Li, Kun Zhai, Jianyong Xiang*, Congpu Mu, Anmin Nie*, Fusheng Wen, Bochong Wang, Guangyu Zhang*, Yongji Gong, Zhisheng Zhao, Yongjun Tian and Zhongyuan Liu, One-Step Growth of Spatially Graded Mo1–xWxS2 Monolayers with a Wide Span in Composition (from x = 0 to 1) at a Large Scale. ACS Appl. Mater. Interfaces 11, 23, 20979(2019). doi:10.1021/acsami.9b03608 (link)

132. Luojun Du, Mengzhou Liao, Gui-Bin Liu, Qinqin Wang, Rong Yang, Dongxia Shi, Yugui Yao, Guangyu Zhang*, Strongly distinct electrical response between circular and valley polarization in bilayer transition metal dichalcogenides. Phys. Rev. B 99, 19, 195415 (2019). doi:10.1103/ PhysRevB.99.195415 (link)

131. Luojun Du†, Yanchong Zhao†, Zhiyan Jia, Mengzhou Liao, Qinqin Wang, Xiangdong Guo, Zhiwen Shi, Rong Yang, Kenji Watanabe, Takashi Taniguchi, Jianyong Xiang, Dongxia Shi, Qing Dai, Zhipei Sun, Guangyu Zhang*, Strong and tunable interlayer coupling of infrared-active phonons to excitons in van der Waals heterostructures. Phys. Rev. B 99, 20, 205410 (2019). doi: 10.1103/PhysRevB.99.205410 (link)

130. Linan Meng†, Na Xin†, Chen Hu†, Jinying Wang, Bo Gui, Junjie Shi, Cheng Wang, Cheng Shen, Guangyu Zhang, Hong Guo*, Sheng Meng*, Xuefeng Guo*, Side-group chemical gating via reversible optical and electric control in a single molecule transistor. Nature Communications 10, 1450 (2019). doi:10.1038/s41467-019-09120-1 (link)

129. Na Li, Zheng Wei, Jing Zhao, Qinqin Wang, Cheng Shen, Shuopei Wang, Jian Tang, Rong Yang*, Dongxia Shi, Guangyu Zhang*, Atomic Layer Deposition of Al2O3 Directly on 2D Materials for High‐Performance Electronics. Advanced Materials Interfaces 6, 1802055 (2019). doi:10.1002/admi.201802055 (link)Cover

128. Jianqi Zhu†, Zhi-Chang Wang†, Huijia Dai†, Qinqin Wang, Rong Yang*, Hua Yu, Mengzhou Liao, Jing Zhang, Wei Chen, Zheng Wei, Na Li, Luojun Du, Dongxia Shi, Wenlong Wang, Lixin Zhang*, Ying Jiang* & Guangyu Zhang*, Boundary activated hydrogen evolution reaction on monolayer MoS2. Nature Communications 10, 1348 (2019). doi: 10.1038/s41467-019-09269-9 (link)

127. Jingxia Liu†, Xihua Chen†, Qinqin Wang†, Mengmeng Xiao, Donglai Zhong, Wei Sun, Guangyu Zhang*, and Zhiyong Zhang*, Ultrasensitive Monolayer MoS2 Field-Effect Transistor Based DNA Sensors for Screening of Down Syndrome. Nano. Lett. 19, 3, 1437 (2019). doi: 10.1021/acs.nanolett.8b03818 (link)

126. Shuopei Wang, Congli He, Jian Tang, Xiaobo Lu, Cheng Shen, Hua Yu, Luojun Du, Jiafang Li, Rong Yang, Dongxia Shi and Guangyu Zhang*, New Floating Gate Memory with Excellent Retention Characteristics. Advanced Electronic Materials 5, 1800726 (2019). doi:10.1002/aelm.201800726 (link)Cover

125. Shuopei Wang, Congli He*, Jian Tang, Rong Yang, Dongxia Shi, and Guangyu Zhang*, Electronic synapses based on ultrathin quasi-two-dimensional gallium oxide memristor. Chin. Phys. B 28, 1, 017304, (2019). doi:10.1088/1674-1056/28/1/017304 (link)

124. Mengzhou Liao, Luojun Du, Tingting Zhang, Lin Gu, Yugui Yao, Rong Yang, Dongxia Shi*, and Guangyu Zhang*, Pressure-mediated contact quality improvement between monolayer MoS2 and graphite. Chin. Phys. B 28, 1, 017301 (2019). doi:10.1088/1674-1056/28/1/017301 (link)

123. Luojun Du, Yuan Huang, Yimeng Wang, Qinqin Wang, Rong Yang*, Jian Tang, Mengzhou Liao, Dongxia Shi, Youguo Shi, Xingjiang Zhou, Qingming Zhang* and Guangyu Zhang*, 2D proximate quantum spin liquid state in atomic-thin α-RuCl3. 2D Materials 6, 015014 (2019). doi:10.1088/2053-1583/aaee29 (link)

回到顶层

2018

122. Zhang Guangyu, Du Shixuan, Wu Kehui, Gao Hong-Jun, Two-dimensional materials research. Science 360, 6389, 673 (2018). doi:10.1126/science.360.6389.673-b (link)

121. Congli He, Guoqiang Yu*, Cecile Grezes, Jiafeng Feng, Zhen Zhao, Seyed Armin Razavi, Qiming Shao, Aryan Navabi, Xiang Li, Qing Lin He, Mengyin Li, Jia Zhang, Kin L. Wong, Dan Wei, Guangyu Zhang, Xiufeng Han*, Pedram Khalili Amiri, and Kang L. Wang*, Spin-Torque Ferromagnetic Resonance in W/CoFeB/W/CoFeB/MgO Stacks. Phys. Rev. Applied 10, 3, 034067 (2018). doi:10.1103/PhysRevApplied.10.034067 (link)

120. Jing Zhao, Zheng Wei, Qian Zhang, Hua Yu, Shuopei Wang, Xixi Yang, Guoyun Gao, Shanshan Qin, Guangyu Zhang*, Qijun Sun*, and Zhong Lin Wang*, Static and Dynamic Piezopotential Modulation in Piezo-Electret Gated MoS2 Field-Effect Transistor. ACS Nano 13, 1, 582 (2018). doi:10.1021/acsnano.8b07477 (link)

119. Liu Le, Tang Jian, Wang Qin-Qin, Shi Dong-Xia*, Zhang Guang-Yu*, Thermal stability of MoS2 encapsulated by graphene. Acta Physica Sinica 67, 22, 226501 (2018). doi: 10.7498/aps.67.20181255 (link)

118. Mengzhou Liao†, Ze-Wen Wu†, Luojun Du, Tingting Zhang, Zheng Wei, Jianqi Zhu, Hua Yu, Jian Tang, Lin Gu, Yanxia Xing, Rong Yang, Dongxia Shi, Yugui Yao* & Guangyu Zhang*, Twist angle-dependent conductivities across MoS2/graphene heterojunctions. Nature Communications 9, 4068, (2018). doi: 10.1038/s41467-018-06555-w (link)

117. W. Yang, H. Graef, X. Lu, G. Zhang, T. Taniguchi, K. Watanabe, A. Bachtold, E. H. T. Teo, E. Baudin, E. Bocquillon, G. Fève, J-M. Berroir, D. Carpentier, M. O. Goerbig, and B. Plaçais*, Landau Velocity for Collective Quantum Hall Breakdown in Bilayer Graphene. Phys. Rev. Lett. 121, 13, 136804 (2018). doi: 10.1103/PhysRevLett.121.136804 (link)

116. Luojun Du, Mengzhou Liao, Jian Tang, Qian Zhang, Hua Yu, Rong Yang, Kenji Watanabe, Takashi Taniguchi, Dongxia Shi*, Qingming Zhang, and Guangyu Zhang*, Strongly enhanced exciton-phonon coupling in two-dimensional WSe2. PRB 97, 23, 235145 (2018). doi: 10.1103/PhysRevB.97.235145 (link)

115. Dongfei Wang†, Hua Yu†, Lei Tao†, Wende Xiao*, Peng Fan, Tingting Zhang, Mengzhou Liao, Wei Guo, Dongxia Shi, Shixuan Du*, Guangyu Zhang*, and Hongjun Gao, Bandgap broadening at grain boundaries in single-layer MoS2. Nano Research 11, 11, 6102 (2018). doi:10.1007/s12274-018-2128-3 (link)

114. Zheng Wei, Qinqin Wang, Yutuo Guo, Jiawei Li, Dongxia Shi*, Guangyu Zhang*, Research progress of high-quality monolayer MoS2 films. Acta Phys. Sin. 67, 12, 128103 (2018). doi: 10.7498/aps.67.128103 (link)

113. Luojun Du, Zhiyan Jia, Qian Zhang, Anmin Zhang, Tingting Zhang, Rui He, Rong Yang, Dongxia Shi, Yugui Yao, Jianyong Xiang, Guangyu Zhang* and Qingming Zhang*, Electronic structure-dependent magneto-optical Raman effect in atomically thin WS2. 2D Materials 5, 035028, (2018). doi:10.1088/2053-1583/aac593 (link)

112. Shuang Wu†, Bing Liu†, Cheng Shen, Si Li, Xiaochun Huang, Xiaobo Lu, Peng Chen, Guole Wang, Duoming Wang, Mengzhou Liao, Jing Zhang, Tingting Zhang, Shuopei Wang, Wei Yang, Rong Yang, Dongxia Shi, Kenji Watanabe, Takashi Taniguchi, Yugui Yao, Weihua Wang, and Guangyu Zhang*, Magnetotransport Properties of Graphene Nanoribbons with Zigzag Edges Phys. Rev. Lett. 120, 21, 216601 (2018). doi: 10.1103/PhysRevLett.120.216601 (link)

111. Luojun Du, Tingting Zhang, Mengzhou Liao, Guibin Liu, Shuopei Wang, Rui He, Zhipeng Ye, Hua Yu, Rong Yang, Dongxia Shi, Yugui Yao, and Guangyu Zhang*, Temperature-driven evolution of critical points, interlayer coupling, and layer polarization in bilayer MoS2. PRB 97, 165410 (2018). doi: 10.1103/PhysRevB.97.165410 (link)

110. Luojun Du, Qian Zhang, Benchao Gong, Mengzhou Liao, Jianqi Zhu, Hua Yu, Rui He, Kai Liu, Rong Yang, Dongxia Shi, Lin Gu, Feng Yan, Guangyu Zhang*, and Qingming Zhang*, Robust spin-valley polarization in commensurate MoS2/graphene heterostructures. PRB 97, 115445 (2018). doi: 10.1103/PhysRevB.97.115445 (link)

109. Lili Jiang†, Sheng Wang†, Zhiwen Shi*, Chenhao Jin, M. Iqbal Bakti Utama, Sihan Zhao, Yuen-Ron Shen, Hong-Jun Gao, Guangyu Zhang & Feng Wang*, Manipulation of domain-wall solitons in bi- and trilayer graphene. Nature Nanotechnology 13, 204 (2018). doi:10.1038/s41565-017-0042-6 (link)

108. Chaoyu Chen, José Avila, Shuopei Wang, Yao Wang, Marcin Mucha-Kruczynski, Cheng Shen, Rong Yang, Benjamin Nosarzewski, Thomas P. Devereaux, Guangyu Zhang, and Maria Carmen Asensio*, Emergence of interfacial polarons from electron-phonon coupling in graphene/h-BN van der Waals heterostructures Nano Lett. 18, 2, 1082 (2018). doi: 10.1021/acs.nanolett.7b04604 (link)

107. Yue Zhang†, Jianqi Zhu†, Pingxue Li*, Xiaoxiao Wang, Hua Yu, Kun Xiao, Chunyong Li and Guangyu Zhang*, All-fiber Yb-doped fiber laser passively mode-locking by monolayer MoS2 saturable absorber. Optics Communications 413, 236 (2018). doi:10.1016/j.optcom.2017.12.053 (link)

回到顶层

2017

106. Luojun Du, Hua Yu, Mengzhou Liao, Shuopei Wang, Li Xie, Xiaobo Lu, Jianqi Zhu, Na Li, Cheng Shen, Peng Chen, Rong Yang, Dongxia Shi*, and Guangyu Zhang*, Modulating PL and electronic structures of MoS2/graphene heterostructures via interlayer twisting angle.Appl. Phys. Lett. 111, 263106 (2017). doi:10.1063/1.5011120 (link)

105. Wei Yang, Simon Berthou, Xiaobo Lu, Quentin Wilmart, Anne Denis, Michael Rosticher, Takashi Taniguchi, Kenji Watanabe, Gwendal Fève, Jean-Marc Berroir, Guangyu Zhang, Christophe Voisin, Emmanuel Baudin, Bernard Plaçais*, A graphene Zener–Klein transistor cooled by a hyperbolic substrate.Nature Nanotechnology 13, 47 (2017). doi:10.1038/s41565-017-0007-9 (link)

104. Hua Yu†, Mengzhou Liao†, Wenjuan Zhao, Guodong Liu, X. J. Zhou, Zheng Wei, Xiaozhi Xu, Kaihui Liu, Zonghai Hu, Ke Deng, Shuyun Zhou, Jin-An Shi, Lin Gu, Cheng Shen, Tingting Zhang, Luojun Du, Li Xie, Jianqi Zhu, Wei Chen, Rong Yang, Dongxia Shi, and Guangyu Zhang*, Wafer-Scale Growth and Transfer of Highly-Oriented Monolayer MoS2 Continuous Films.ACS Nano. 11, 12, 12001 (2017). doi: 10.1021/acsnano.7b03819 (link)

103. 张婷婷,成蒙, 杨蓉*, 张广宇*, 锯齿形石墨烯反点网络加工与输运性质研究。物理学报 66, 21, 216103 (2017). doi: 10.7498/aps.66.216103 (link)

102. Tingting Zhang, Zhiming Yu*, Wei Guo, Dongxia Shi, Guangyu Zhang*, Yugui Yao*, From Type-II Triply Degenerate Nodal Points and Three-Band Nodal Rings to Type-II Dirac Points in Centrosymmetric Zirconium Oxide.J. Phys. Chem. Lett. 8, 5792 (2017). doi: 10.1021/acs.jpclett.7b02642 (link)

101. Li Xie, Luojun Du, Xiaobo Lu, Rong Yang*, Dongxia Shi, Guangyu Zhang*, A facile and efficient dry transfer technique for two-dimensional Van der Waals heterostructure. Chin. Phys. B 26, 8, 087306 (2017). doi: 10.1088/1674-1056/26/8/087306 (link)

100. Jianqi Zhu, Zhichang Wang, Hua Yu, Na Li, Jing Zhang, JianLing Meng, Mengzhou Liao, Jing Zhao, Xiaobo Lu, Luojun Du, Rong Yang, Dongxia Shi, Ying Jiang*, and Guangyu Zhang*, Argon Plasma Induced Phase Transition in Monolayer MoS2. JACS. 139, 30, 10216 (2017). doi: 10.1021/jacs.7b05765 (link)

99. Li Xie, Mengzhou Liao, Shuopei Wang, Hua Yu, Luojun Du, Jian Tang, Jing Zhao, Jing Zhang, Peng Chen, Xiaobo Lu, Guole Wang, Guibai Xie, Rong Yang, Dongxia Shi, Guangyu Zhang*, Graphene-Contacted Ultrashort Channel Monolayer MoS2 Transistors. Advanced Materials 29, 1702522 (2017). doi: 10.1002/adma.201702522 (link)

98. Wei-fang Zhao†, Hua Yu†, Meng-zhou Liao, Ling Zhang, Shu-zhen Zou, Hai-juan Yu, Chao-jian He, Jing-yuan Zhang, Guang-yu Zhang and Xue-chun Lin*, Large area growth of monolayer MoS2 film on quartz and its use as a saturable absorber in laser mode-locking. Semicond. Sci. Technol. 32, 025013 (2017). doi:10.1088/1361-6641/32/2/025013 (link)

97. Na Xin, Jinying Wang, Chuancheng Jia , Zitong Liu, Xisha Zhang, Chenmin Yu, Mingliang Li, Shuopei Wang, Yao Gong, Hantao Sun, Guanxin Zhang, Zhirong Liu, Guangyu Zhang, Jianhui Liao, Deqing Zhang*, and Xuefeng Guo*, Stereoelectronic Effect-Induced Conductance Switching in Aromatic Chain Single-Molecule Junctions.Nano Lett.17, 2, 856 (2017). doi: 10.1021/acs.nanolett.6b04139 (link)

96. Xianzhong Yang, Hua Yu, Xiao Guo, Qianqian Ding, Tonu Pullerits, Rongming Wang, Guangyu Zhang, Wenjie Liang, Mengtao Sun*, Plasmon-exciton coupling of monolayer MoS2-Ag nanoparticles hybrids for surface catalytic reaction. Materials Today Energy 5, 72 (2017). doi: 10.1016/j.mtener. 2017.05.005 (link)

95. Jing Zhao, Na Li,Hua Yu, Zheng Wei, Mengzhou Liao, Peng Chen, Shuopei Wang, Dongxia Shi, Qijun Sun*, Guangyu Zhang*, Highly Sensitive MoS2 Humidity Sensors Array for Noncontact Sensation. Advanced Materials 29, 1702076 (2017). doi: 10.1002/adma.201702076 (link)

94. Na Xin, Chuancheng Jia, Jinying Wang, Shuopei Wang, Mingliang Li, Yao Gong, Guangyu Zhang, Daoben Zhu*, and Xuefeng Guo*, Thermally Activated Tunneling Transition in a Photoswitchable Single-Molecule Electrical Junction.J. Phys. Chem. Lett. 8, 13, 2849 (2017). doi: 10.1021/acs.jpclett.7b01063 (link)

93. Jinchen Wang, Yifei Guan, Hua Yu, Na Li, Shuopei Wang, Cheng Shen, Zhijiang Dai, Decheng Gan, Rong Yang, Songbai He* and Guangyu Zhang*, Transparent graphene microstrip filters for wireless communications Journal of Physics D: Applied Physics 50, 34, 34LT01 (2017). doi:10.1088/1361-6463/aa7c99 (link)

92. Tingting Zhang, Shuang Wu, Rong Yang, Guangyu Zhang*, Graphene: Nanostructure engineering and applications.Frontiers of Physics 12, 127206 (2017). doi: 10.1007/s11467-017-0648-z (link)

91. Guorui Chen, Mengqiao Sui, Duoming Wang, Shuopei Wang, Jeil Jung, Pilkyung Moon, Shaffique Adam, Kenji Watanabe, Takashi Taniguchi, Shuyun Zhou, Mikito Koshino, Guangyu Zhang, and Yuanbo Zhang*, Emergence of Tertiary Dirac Points in Graphene Moiré Superlattices. Nano Lett. 17, 6, 3576 (2017). doi: 10.1021/acs.nanolett.7b00735 (link)

90. Renwei Liu, Suna Fan, Dongdong Xiao, Jin Zhang, Mengzhou Liao, Shansheng Yu, Fanling Meng, Baoli Liu, Lin Gu, Sheng Meng, Guangyu Zhang, Weitao Zheng, Shuxin Hu, and Ming Li*, Free-Standing Single-Molecule Thick Crystals Consisting of Linear Long-Chain Polymers. Nano Lett. 17, 3, 1655 (2017). doi: 10.1021/acs.nanolett.6b04896 (link)

89. Ruina Liu, Baoxin Liao, Xiangdong Guo, Debo Hu, Hai Hu, Luojun Du, Hua Yu, Guangyu Zhang, Xiaoxia Yang* and Qing Dai*, Study of graphene plasmons in graphene–MoS2 heterostructures for optoelectronic integrated devices. Nanoscale 9, 208 (2017). doi: 10.1039/C6NR07081G (link)

回到顶层

2016

88. Guocai Wang, Lihong Bao, Tengfei Pei, Ruisong Ma, Yu-Yang Zhang, Liling Sun, Guangyu Zhang, Haifang Yang, Junjie Li, Changzhi Gu, Shixuan Du, Sokrates T. Pantelides*, Ronald D. Schrimpf and Hong-jun Gao*,Introduction of Interfacial Charges to Black Phosphorus for a Family of Planar Devices. Nano Lett. 16, 11, 6870 (2016). doi: 10.1021/acs.nanolett.6b02704 (link)

87. Luojun Du, Hua Yu, Li Xie, Shuang Wu, Shuopei Wang, Xiaobo Lu, Mengzhou Liao, Jianling Meng, Jing Zhao, Jing Zhang, Jianqi Zhu, Peng Chen, Guole Wang, Rong Yang, Dongxia Shi and Guangyu Zhang*, The Effect of Twin Grain Boundary Tuned by Temperature on the Electrical Transport Properties of Monolayer MoS2. Crystals. 6, 9, 115 (2016). doi:10.3390/cryst6090115 (link)

86. Guole Wang, Li Xie, Peng Chen, Rong Yang*, Dongxia Shi and Guangyu Zhang*, Anisotropic etching of bilayer graphene controlled by gate voltage. Acta Physica Sinica. 65, 19, 196101 (2016). doi: 10.7498/aps.65.196101 (link)

85. Hua Yu, Zhengzhong Yang, Luojun Du, Jing Zhang, Jinan Shi, Wei Chen, Peng Chen, Mengzhou Liao, Jing Zhao, Jianling Meng, Guole Wang, Jianqi Zhu, Rong Yang, Dongxia Shi, Lin Gu, and Guangyu Zhang*, Precisely Aligned Monolayer MoS2 Epitaxially Grown on h-BN basal Plane. Small 13, 1603005 (2016). doi:10.1002/smll.201603005 (link)

84. Hailong Chen†, Xiewen Wen†, Jing Zhang†, Tianmin Wu, Yongji Gong, Xiang Zhang, Jiangtan Yuan, Chongyue Yi, Jun Lou, Pulickel M. Ajayan, Wei Zhuang*, Guangyu Zhang* and Junrong Zheng*, Ultrafast Formation of Interlayer Hot Excitons in Atomically Thin MoS2/WS2 Heterostructures. Nature Communications 7, 12512 (2016). doi:10.1038/ncomms12512.† Co-first author (link)

83. Eryin Wang†, Xiaobo Lu†, Shijie Ding, Wei Yao, Mingzhe Yan, Guoliang Wan, Ke Deng, Shuopei Wang, Guorui Chen, Liguo Ma, Jeil Jung, Alexei Fedorov, Yuanbo Zhang, Guangyu Zhang and Shuyun Zhou*, Second generation Dirac cones and inversion symmetry breaking induced gaps in graphene/h-BN. Nature Physics 12, 1111 (2016). doi:10.1038/nphys3856. † Co-first author (link)

82. Eryin Wang, Guorui Chen, Guoliang Wan, Xiaobo Lu, Chaoyu Chen, Jose Avila,  Alexei Fedorov, Guangyu Zhang, Maria Asensio, Yuanbo Zhang and Shuyun Zhou*, Electronic structure of transferred graphene/h-BN van der Waals heterostructures with nonzero stacking angles by nano-ARPES. JPCM 28, 44, 444002 (2016). doi:10.1088/0953-8984/28/44/444002 (link)

81. Yinjuan Huang, Yiyong Mai*, Uliana Beser, Joan Teyssandier, Gangamallaiah Velpula, Hans van Gorp, Lasse Arnt Straas, Michael Ryan Hansen, Daniele Rizzo, Cinzia Casiraghi, Rong Yang, Guangyu Zhang, Dongqing Wu, Fan Zhang, Deyue Yan, Steven De Feyter, Klaus Müllen and Xinliang Feng*, Poly(ethylene oxide) Functionalized Graphene Nanoribbons with Excellent Solution Processability. JACS 138, 32, 10136 (2016). doi: 10.1021/jacs.6b07061 (link)

80. Guole Wang, Shuang Wu, Tingting Zhang, Peng Chen, Xiaobo Lu, Shuopei Wang, Duoming Wang, Kenji Watanabe, Takashi Taniguchi, Dongxia Shi, Rong Yang* and Guangyu Zhang*, Patterning monolayer graphene with zigzag edges on hexagonal boron nitride by anisotropic etching. Appl. Phys. Lett. 109, 053101 (2016, Cover Story). doi:10.1063/1.4959963 Highlighted by A(link)

79.  Jing Zhao†, Hua Yu†, Wei Chen, Rong Yang, Jianqi Zhu, Mengzhou Liao, Dongxia Shi, and Guangyu Zhang*, Patterned Peeling 2D MoS2 off the Substrate. ACS Appl. Mater. Interfaces 8, 26, 16546 (2016). doi:10.1021/acsami.6b04896 (†co-first authors) Highlighted by D4SCI.com.(link)

78.  Jianling Meng, Guole Wang, Xiaomin Li, Xiaobo Lu, Jing Zhang, Hua Yu, Wei Chen, Luojun Du, Mengzhou Liao, Jing Zhao, Peng Chen, Jianqi Zhu, Xuedong Bai, Dongxia Shi* & Guangyu Zhang*, Rolling Up a Monolayer MoS2 Sheet. Small 12, 28, 3770 (2016). doi:10.1002/smll.201601413 Highlighted by D4SCI.com.(link)

77. Z. Zhao, H. Liu, Y. Zhao, C. Cheng, J. Zhao, Q. Tang, G. Zhang and Y. Liu*, Anisotropic Charge-Carrier Transport in High-Mobility Donor–Acceptor Conjugated Polymer Semiconductor Films. Chem. Asian J. 11, 2725 (2016). doi:10.1002/asia.201600082 (link)

76. Chuancheng Jia, Agostino Migliore, Na Xin, Shaoyun Huang, Jinying Wang, Qi Yang, Shuopei Wang, Hongliang Chen, Duoming Wang, Boyong Feng, Zhirong Liu, Guangyu Zhang, Da-Hui Qu, He Tian, Mark A. Ratner, H. Q. Xu*, Abraham Nitzan*, Xuefeng Guo*, Covalently bonded single-molecule junctions with stable and reversible photoswitched conductivity. Science 352, 6292, 1443 (2016). doi:10.1126/science.aaf6298 (link)

75.  Peng-Zhi Shao, Hai-Ming Zhao, Hui-Wen Cao, Xue-Feng Wang, Yu Pang, Yu-Xing Li, Ning-Qin Deng, Jing Zhang, Guangyu Zhang, Yi Yang, Sheng Zhang and Tian-Ling Ren*, Enhancement of carrier mobility in MoS2 field effect transistors by a SiO2 protective layer. Appl. Phys. Lett. 108, 203105 (2016). doi:10.1063/1.4950850 (link)

74.  Duoming Wang, Guorui Chen, Chaokai Li, Meng Cheng, Wei Yang, Shuang Wu, Guibai Xie, Jing Zhang, Jing Zhao, Xiaobo Lu, Peng Chen, Guole Wang, Jianling Meng, Jian Tang, Rong Yang, Congli He, Donghua Liu, Dongxia Shi, Kenji Watanabe, Takashi Taniguchi, Ji Feng, Yuanbo Zhang, and Guangyu Zhang*, Thermally Induced Graphene Rotation on Hexagonal Boron Nitride. Phys. Rev. Lett. 116, 12, 126101 (2016). doi:10.1103/PhysRevLett.116.126101 (editors' suggestions) (link)

73.  Patrick Gallagher, Menyoung Lee, Francois Amet, Petro Maksymovych, Jun Wang, Shuopei Wang, Xiaobo Lu, Guangyu Zhang, Kenji Watanabe, Takashi Taniguchi & David Goldhaber-Gordon*, Switchable friction enabled by nanoscale self-assembly on graphene. Nature Communications 7, 10745 (2016). doi:10.1038/ncomms10745 (link)

72.  Peng Chen, Tingting Zhang, Jing zhang, Jianyong Xiang, Hua Yu, Shuang Wu, Xiaobo Lu, Guole Wang, Fusheng Wen, Zhongyuan Liu, Rong Yang, Dongxia Shi and Guangyu Zhang*, Gate tunable WSe2–BP van der Waals heterojunction devices. Nanoscale 8, 3254 (2016). doi:10.1039/C5NR09218C (link)

71.  Wei Yang, Xiaobo Lu, Guorui Chen, Shuang Wu, Guibai Xie, Meng Cheng, Duoming Wang, Rong Yang, Dongxia Shi, Kenji Watanabe, Takashi Taniguchi, Christophe Voisin, Bernard Plaçais, Yuanbo Zhang, and Guangyu Zhang*, Hofstadter Butterfly and Many-Body Effects in Epitaxial Graphene Superlattice. Nano Lett. 16, 4, 2387 (2016). doi:10.1021/acs.nanolett.5b05161 (link)

70. Xiaobo Lu, Wei Yang, Shuopei Wang, Shuang Wu, Peng Chen, Jing Zhang, Jing Zhao, Jianling Meng, Guibai Xie, Duoming Wang, Guole Wang, Ting Ting Zhang, Kenji Watanabe, Takashi Taniguchi, Rong Yang, Dongxia Shi and Guangyu Zhang*, Graphene nanoribbons epitaxy on boron nitride. Appl. Phys. Lett. 108, 11, 113103 (2016). doi:10.1063/1.4943940 (link)

69. Jing Zhang, Jinhuan Wang, Jianyong Xiang, Yue Sun, Shuang Wu, Zhiyan Jia, Hua Yu, Xiaobo Lu, Wei Chen, Peng Chen, Jianqi Zhu, Guibai Xie, Rong Yang, Dongxia Shi*, Xiulai Xu, Kaihui Liu and Guangyu Zhang*, Observation of Strong Interlayer Coupling in MoS2/WS2 heterostructures. Advanced Materials 28, 1950 (2016). doi:10.1002/adma.201504631 (link)

68. Jing Zhao, Wei Chen, Jianling Meng, Hua Yu, Mengzhou Liao, Jianqi Zhu, Rong Yang, Dongxia Shi, Guangyu Zhang*, Integrated Flexible and High-Quality Thin Film Transistors Based on Monolayer MoS2. Advanced Electronic Materials 2, 1500379 (2016). doi:10.1002/aelm.201500379 (link)

回到顶层

2015

67. Xuefei Li, Xiaobo Lu, Tiaoyang Li, Wei Yang, Jianming Fang, Guangyu Zhang and Yanqing Wu*, Noise in Graphene Superlattices Grown on Hexagonal Boron Nitride. ACS Nano 9, 11, 11382 (2015). doi:10.1021/acsnano.5b05283 (link)

66. Wei Chen†, Jing Zhao†, Jing Zhang†, Lin Gu, Zhenzhong Yang, Xiaomin Li, Hua Yu, Xuetao Zhu, Rong Yang, Dongxia Shi, Xuechun Lin, Jiandong Guo, Xuedong Bai, and Guangyu Zhang*, Oxygen-Assisted Chemical Vapor Deposition Growth of Large Single-Crystal and High-Quality Monolayer MoS2. J. Am. Chem. Soc. 137, 50, 15632 (2015). doi:10.1021/jacs.5b10519 (link)

65. Jianling Meng, Rong Yang, Jing Zhao, Congli He, Guole Wang, Dongxia Shi* and Guangyu Zhang*, Nanographene charge trapping memory with a large memory window. Nanotechnology 26, 45, 455704 (2015). doi:10.1088/0957-4484/26/45/455704 (link)

64. Peng Chen, Jianyong Xiang, Hua Yu, Jing zhang, Guibai Xie, Shuang Wu, Xiaobo Lu, Guole Wang, Jing Zhao, Fusheng Wen, Zhongyuan Liu, Rong Yang, Dongxia Shi and Guangyu Zhang*, Gate tunable MoS2–black phosphorus heterojunction devices. 2D Materials 2, 034009 (2015). doi:10.1088/2053-1583/2/3/034009 (invited paper)(link)

63. Jing Zhao, Guole Wang, Rong Yang, Xiaobo Lu, Meng Cheng, Congli He, Guibai Xie, Jianling Meng, Dongxia Shi, and Guangyu Zhang*, Tunable Piezoresistivity of Nanographene Films for Strain Sensing. ACS Nano 9, 2, 1622 (2015). doi:10.1021/nn506341u (link)

62. 卢晓波,张广宇*,石墨烯莫尔超晶格。物理学报  64, 77305 (2015). doi:10.7498/aps.64.077305 (invited paper) (link)

61. 沈成, 张菁, 时东霞, 张广宇*,退火对单层二硫化钼荧光特性的影响。化学学报  73, 954 (2015). doi:10.6023/A15030220 (invited paper) (link)

回到顶层

2014

60. Lifen Wang, Donghua Liu, Shize Yang, Xuezeng Tian, Guangyu Zhang, Wenlong Wang, Enge Wang, Zhi Xu, Xuedong Bai*,Exotic Reaction Front Migration and Stage Structure in Lithiated Silicon Nanowires. ACS Nano 8, 8, 8249 (2014). doi:10.1021/nn502621k (link)

59. Yiwei Liu, Rong Yang, Huali Yang, Duoming Wang, Qingfeng Zhan, Guangyu Zhang, Yali Xie, Bin Chen and Run-Wei Li*, Anomalous anisotropic magnetoresistance effects in graphene. AIP Advances 4, 9, 097101 (2014). doi:10.1063/1.4894519 (link)

58. Y. Guo, L. W. Guo, J. Huang, R. Yang, Y. P. Jia, J. J. Lin, W. Lu, Z. L. Li, and X. L. Chen, The correlation of epitaxial graphene properties and morphology of SiC(0001). J. Appl. Phys. 115, 4, 043527 (2014). doi:10.1063/1.4863796 (link)

57. Jianling Meng, Dongxia Shi and Guangyu Zhang*,A review of nanographene: growth and applications. Mod. Phys. Lett. B 28, 20, 1430009 (2014). doi:10.1142/S0217984914300099 (invited review) (link)

56. Shuang Wu, Rong Yang, Meng Cheng, Wei Yang, Guibai Xie, Peng Chen, Dongxia Shi, and Guangyu Zhang*, Defect-enhanced coupling between graphene and SiO2 substrate. Appl. Phys. Lett. 105, 063113 (2014). doi:10.1063/1.4892959 (link)

55. Jingjing Lin, Liwei Guo, Yuping Jia, Rong Yang, Shuang Wu, Jiao Huang, Yu Guo, Zhilin Li, Guangyu Zhang and Xiaolong Chen*, Identification of dominant scattering mechanism in epitaxial graphene on SiC. Appl. Phys. Lett. 104, 18, 183102 (2014). doi:10.1063/1.4875384 (link)

54. R. Yang†, S. Wu†, D. M. Wang, G. B. Xie, M. Cheng, G. L. Wang, W. Yang, P. Chen, D. X. Shi, G. Y. Zhang*,Fabrication of high-quality all-graphene devices with low contact resistances. Nano Research 7, 10, 1449 (2014). doi:10.1007/s12274-014-0504-1 (link)

53. J. Zhang, H. Yu, W. Chen, X. Z. Tian, D. H. Liu, M. Cheng, G. B. Xie, W. Yang, R. Yang, X. D. Bai, D. X. Shi and G. Y. Zhang*, Scalable Growth of High-Quality Polycrystalline MoS2 Monolayers on SiO2 with Tunable Grain Sizes. ACS Nano 8, 6, 6024 (2014). doi:10.1021/nn5020819 (link)

52. M. Cheng†, D. M. Wang†, Z. R. Sun, J. Zhao, R. Yang, G. L. Wang, W. Yang, G. B. Xie, J. Zhang, P. Chen, C. L. He, D. H. Liu, L. M. Xu, D. X. Shi, E. G. Wang and G. Y. Zhang*, A Route towards Digital Manipulation of Water Nanodroplets on Surface. ACS Nano 8, 4, 3955 (2014). doi:10.1021/nn500873q (link)

51. Zhiwen Shi, Chenhao Jin, Wei Yang, Long Ju,  Jason Horng, Xiaobo Lu, Hans A. Bechtel, Michael C. Martin, Deyi Fu, Junqiao Wu, Kenji Watanabe, Takashi Taniguchi, Yuanbo Zhang, Xuedong Bai, Enge Wang, Guangyu Zhang* & Feng Wang*, Gate-dependent pseudospin mixing in graphene/boron nitride moiré superlattices. Nature Physics 10, 743 (2014). doi:10.1038/NPHYS3075(link)

50. Zhi-Guo Chen, Zhiwen Shi, Wei Yang, Xiaobo Lu, You Lai, Hugen Yan, Feng Wang*, Guangyu Zhang*, Zhiqiang Li*, Observation of an intrinsic bandgap and Landau level renormalization in graphene/boron-nitride heterostructures. Nature Communications 5, 4461 (2014). doi:10.1038/ncomms5461 (link)

49. L. Ju, J. Velasco Jr., E. Huang, S. Kahn, C. Nosiglia, H. Tsai, W. Yang, T. Taniguchi, K. Watanabe, Y. B. Zhang, G. Y. Zhang, M. Crommie, A. Zettl and F. Wang*, Photoinduced Doping in Graphene/Boron Nitride Heterostructures. Nature Nanotechnology 9, 348 (2014). doi:10.1038/NNANO.2014.60 (link)

48. G. B. Xie, R. Yang, P. Chen, J. Zhang, X. Z. Tian, Shuang. Wu, J. Zhao, M. Cheng, W. Yang, D. M. Wang, C. L. He, X. D. Bai, D. X. Shi* and G. Y. Zhang*, A General Route Towards Defect and Pore Engineering in Graphene. Small 10, 11, 2280 (2014). doi:10.1002/smll.20130367 (invited paper) (link)

47. D. H. Liu, W. Yang, L. C. Zhang, J. Zhang, J. L. Meng, R. Yang, G. Y. Zhang, D. X. Shi*, Two-step growth of graphene with separate controlling nucleation and edge growth directly on SiO2 substrates. Carbon 72, 387 (2014). doi:10.1016/j.carbon.2014.02.030 (link)

回到顶层

2013

46. Wei Yang, Guorui Chen, Zhiwen Shi, Cheng-Cheng Liu, Lianchang Zhang, Guibai Xie, Meng Cheng, Duoming Wang, Rong Yang, Dongxia Shi, Kenji Watanabe, Takashi Taniguchi, Yugui Yao, Yuanbo Zhang and Guangyu Zhang*, Epitaxial growth of single-domain graphene on hexagonal boron nitride. Nature Materials 12, 792 (2013). doi:10.1038/NMAT3695 (link)

45. Congli He, Jiafang Li, Xing Wu, Peng Chen, Jing Zhao, Kuibo Yin, Meng Cheng, Wei Yang, Guibai Xie, Duoming Wang, Donghua Liu, Rong Yang, Dongxia Shi, Zhiyuan Li, Litao Sun and Guangyu Zhang*, Tunable Electroluminescence in Planar Graphene/SiO2 Memristors. Advanced Materials 25, 39, 5593 (2013). doi:10.1002/adma.201302447 (link)

44. Rong Yang†, Chenxin Zhu†, Jianling Meng, Zongliang Huo, Meng Cheng, Donghua Liu, Wei Yang, Dongxia Shi, Ming Liu and Guangyu Zhang*, Isolated nanographene crystals for nano-floating gate in charge trapping memory. Scientific Reports 3, 2126 (2013). doi:10.1038/srep02126 († co-first authors) (link)

43. C. J. Lin, X. Y. He,J. Liao, X. X. Wang, V. Sacksteder IV, W. M. Yang, T. Guan, Q. M. Zhang, L. Gu, G. Y. Zhang, C. G. Zeng, X. Dai, K. H. Wu and Y. Q. Li*, Parallel field magnetoresistance in topological insulator thin films. Phys. Rev. B 88, 4, 041307R (2013). doi:10.1103/PhysRevB.88.041307 (link)

42. Jing Zhao, Guangyu Zhang and Dongxia Shi*, Review on graphene-based strain sensors. Chinese Physics B 22, 5, 057701 (2013). doi:10.1008/1674-1056/22/5/057701 (invited review) (link)

41. Peng Chen and Guangyu Zhang*, Carbon-based spintronics. Science China-Physics Mechanics & Astronomy 56, 1, 207 (2013). doi:10.1007/s11433-012-4970-8 (invited review) (link)

回到顶层

2012

40. Lianchang Zhang*, Ming Ni, Donghua Liu, Dongxia Shi and Guangyu Zhang, Competitive Growth and Etching of Epitaxial Graphene. J. Phys. Chem. C. 116, 51, 26929 (2012). doi:10.1021/jp310134g (link)

39. Guibai Xie, Zhiwen Shi, Rong Yang, Donghua Liu, Wei Yang, Meng Cheng, Duoming Wang, Dongxia Shi and Guangyu Zhang*, Graphene Edge Lithography. Nano Letters 12, 9, 4642 (2012). doi:10.1021/nl301936r (link)

38. Jing Zhao, Congli He, Rong Yang, Zhiwen Shi, Meng Cheng, Wei Yang, Guibai Xie, Duoming Wang, Dongxia Shi and Guangyu Zhang*, Ultra-sensitive strain sensors based on piezoresistive nanographene films. Appl. Phys. Lett. 101, 6, 063112 (2012). doi:10.1063/1.4742331 (link)

37. Donghua Liu, Zhiwen Shi, Lianchang Zhang, Congli He, Jing Zhang, Meng Cheng, Rong Yang, Xuezeng Tian, Xuedong Bai, Dongxia Shi and Guangyu Zhang*, Reducing the contact resistance of SiNW devices by employing a heavily doped carrier injection layer. Nanotechnology 23, 30, 305701 (2012). doi:10.1088/0957-4484/23/30/305701 (link)

36. Congli He, Zhiwen Shi, Lianchang Zhang, Wei Yang, Rong Yang, Dongxia Shi, and Guangyu Zhang*, Multilevel Resistive Switching in Planar Graphene/SiO2 Nanogap Structures. ACS Nano 6, 5, 4214 (2012). doi:10.1021/nn300735s (link)

35. Lianchang Zhang, Zhiwen Shi, Donghua Liu, Rong Yang, Dongxia Shi, Guangyu Zhang*, Vapour-Phase Graphene Epitaxy at Low Temperatures. Nano Research 5, 4, 258 (2012). doi:10.1007/s12274-012-0205-6 (link)

34. Meng Cheng, Rong Yang, Lianchang Zhang, Zhiwen Shi, Wei Yang, Duoming Wang, Guibai Xie, Dongxia Shi, Guangyu Zhang*, Restoration of graphene from graphene oxide by defect repair. Carbon 50, 7, 2581 (2012). doi:10.1016/j.carbon.2012.02.016 (link)

33. Wei Yang, Congli He, Lianchang Zhang, Yi Wang, Zhiwen Shi, Meng Cheng, Guibai Xie, Duoming Wang, Rong Yang, Dongxia Shi, Guangyu Zhang*, Growth, Characterization, and Properties of Nanographene. Small 8, 9, 1429 (2012). doi:10.1002/smll.201101827 (invited paper) (link)

32. Shuang Wu, Rong Yang, Dongxia Shi and Guangyu Zhang*, Identification of structural defects in graphitic materials by gas-phase anisotropic etching. Nanoscale 4, 2005 (2012). doi:10.1039/C2NR11707J (link)

31. Zhiwen Shi, Hongliang Lu, Lianchang Zhang, Rong Yang, Yi Wang, Donghua Liu, Haiming Guo, Dongxia Shi, Hongjun Gao, Enge Wang, Guangyu Zhang*, Studies of Graphene-Based Nanoelectromechanical Switches. Nano Research 5, 2, 82 (2012). doi:10.1007/s12274-011-0187-09 (link)

回到顶层

2011

30. Chenxin Zhu, Zhongguang Xu, Zongliang Huo, Rong Yang, Zhiwei Zheng, Yanxiang Cui, Jing Liu, Yumei Wang, Dongxia Shi, Guangyu Zhang, Fanghua Li, and Ming Liu*, Investigation on interface related charge trap and loss characteristics of high-k based trapping structures by electrostatic force microscopy. Appl. Phys. Lett. 99, 22, 223504 (2011). doi:10.1063/1.3664222 (link)

29. Rong Yang, Zhiwen Shi, Lianchang Zhang, Dongxia Shi, Guangyu Zhang*, Observation of Raman G-Peak Split for Graphene Nanoribbons with Hydrogen Terminated Zigzag Edges. Nano Letters 11, 10, 4083 (2011). doi:10.1021/nl201387x (link)

28. Zhiwen Shi, Rong Yang, Lianchang Zhang, Yi Wang, Donghua Liu, Dongxia Shi, Enge Wang, and Guangyu Zhang*, Patterning Graphene with Zigzag Edges by Self-Aligned Anisotropic Etching. Advanced Materials 23, 27, 3061 (2011). doi:10.1002/adma.201100633 (link)

27. Yi Wang, Rong Yang, Zhiwen Shi, Lianchang Zhang, Dongxia Shi, Enge Wang and Guangyu Zhang*, Super-Elastic Graphene Ripples for Flexible Strain Sensors. ACS Nano 5, 5, 3645 (2011). doi:10.1021/nn103523t .(link)

26. Lianchang Zhang, Zhiwen Shi, Yi Wang, Rong Yang, Dongxia Shi and Guangyu Zhang*, Catalyst-free growth of nanographene film on various substrates. Nano Research 4, 3, 315 (2011). doi:10.1007/s12274-010-0086-5 (link)

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2010

25. Rong Yang, Lianchang Zhang, Yi Wang, Zhiwen Shi, Dongxia Shi, Hongjun Gao, Enge Wang and Guangyu Zhang*, An Anisotropic Etching Effect in the Graphene Basal Plane. Advanced Materials 22, 36, 4014 (2010). doi:10.1002/adma.201000618 (link)

24. R. Yang, Q. S. Huang, X. L. Chen, G. Y. Zhang* and H. -J. Gao, Substrate Doping Effects on Raman Spectrum of Epitaxial Graphene on SiC. J. Appl. Phys.107, 3, 034305 (2010). doi:10.1063/1.3283922 (link)

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2009

23. S. Ma, V. V. S. S. Srikanth, D. Maik, G. Y. Zhang, T. Staedler and X. Jiang*, From carbon nanobells to nickel nanotubes. Appl. Phys. Lett. 94, 1, 013109 (2009). doi:10.1063/1.3005592 (link)

22. X. M. Sun, S. M. Tabakman, W. S. Seo, L. Zhang, G. Y. Zhang, S. Sherlock, L. Bai, H. Dai*, Separation of Nanoparticles in a Density Gradient: FeCo@C and Gold Nanocrystals. Angew. Chem. Int. Ed. 48, 939 (2009). doi:10.1002/anie.200805047 (link)

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2008

21. Z. Chen, S. M. Tabakman, A. P. Goodwin, M. G. Kattah, D. Daranciang, X. Wang, G.Y. Zhang, X.L. Li, Z. Liu, P. J. Utz, K. Jiang, S. Fan & H. Dai*, Protein microarrays with carbon nanotubes as multicolor Raman labels. Nature Biotechnology 26, 1285 (2008). doi:10.1038/nbt.1501 (link)

20. X. L. Li, G. Y. Zhang, X.D. Bai, X. M. Sun, X. R. Wang, E. G. Wang and H. Dai*, Highly Conducting Graphene Sheets and Langmuir-Blodgett Films. Nature Nanotechnology 3, 538 (2008). doi:10.1038/nnano.2008.210 (link)

19. P. H. Tan, J. Zhang, X. C. Wang, G. Y. Zhang, E. G. Wang*, Raman Scattering from an Individual Tubular Graphite Cone. Carbon 45, 1116 (2007). doi:10.1016/j.carbon.2007.02.001 (link)

18. M. A. Panzer, G. Zhang, D. Mann, X. Hu, E. Pop, H. Dai, K. E. Goodson, Thermal Properties of Metal-Coated Vertically Aligned Single-Wall Nanotube Arrays. Journal of Heat Transfer 130, 5, 052401 (2008). doi:10.1115/1.2885159 (link)

17. G. Y. Zhang, P. F. Qi, X. R. Wang, Y. R. Lu, X. L. Li, R. Tu, S. Bangsaruntip, D. Mann, L. Zhang & H. Dai*, Selectively Etching of Metallic Carbon Nanotubes by Gas-phase Reaction. Science 314, 5801, 974 (2006). doi:10.1126/science.1133781 (link)

16. G. Y. Zhang, P. F. Qi, X. R. Wang, Y. R. Lu, D. Mann, X. L. Li & H. Dai*, Hydrogenation and Hydrocarbonation and etching of single walled carbon nanotubes. J. Am. Chem. Soc. 128, 18, 6026 (2006). doi:10.1021/ja061324b (link)

15. G. Y. Zhang; X. R. Wang; X. L. Li; Y. R. Lu; A. Javey and H. J. Dai*, Carbon nanotubes: From growth, placement and assembly control to 60mV/decade and sub-60 mV/decade tunnel transistors. IEDM 1&2, 160 (2006).(link)

14. G. Y. Zhang, D. Mann, L. Zhang, A. Javey, Y. M. Li, E. Yenilmez, Q. Wang, J. P. McVittie, Y. Nishi, J. Gibbons & H. Dai*, Ultra-high-yield growth of vertical single-walled carbon nanotubes: Hidden roles of hydrogen and oxygen. PNAS 102, 16141 (2005).(link)

13. G. Y. Zhang, X. D. Bai, E. G. Wang*, Y. Guo & W. L. Guo, Monochiral tubular graphite cones formed by radial layer-by-layer growth. Phys. Rev. B 71, 113411 (2005).(link)

12. G. Y. Zhang, X. Jiang* & E. G. Wang*, Self-assembly of carbon nanohelices: Characteristics and FEE properties. Appl. Phys. Lett. 84, 2646 (2004). (link)

11. 张广宇,王恩哥*,一种新的纳米结构—管状石墨锥。物理 32,567 (2003).(link)

10. 葛颂,冯孙齐,俞大鹏*,张广宇,刘双, 取向碳纳米管膜的大面积制备及其场发射性能的研究。北京大学学报 39, 341 (2003).(link)

9. G. Y. Zhang, X. Jiang* & E. G. Wang*, Tubular Graphite cones. Science 300, 472 (2003).(link)

8. G. Y. Zhang & E. G. Wang*, Cu-filled carbon nanotubes by simultaneous plasma-assisted copper incorporation. Appl. Phys. Lett. 82, 1926 (2003). (link)

7. D. Y. Zhong, Z. G. Guo, J. Ma, M. M. Zhou, Y. K. Pu, S. Liu, G. Y. Zhang & E.G. Wang*, Optical emission spectroscopy study of the nitrogen influence on carbon nanotube growth. Carbon 41, 1827 (2003).(link)

6. G. Y. Zhang, X. C. Ma, D. Y. Zhong & E. G. Wang*, Polymerized carbon nitride nanobells. J. Appl. Phys. 91, 9324 (2002).(link)

5. D. Y. Zhong, G.Y. Zhang, S. Liu, T. Sakurai & E. G. Wang*, Universal Field Emission Model for Carbon Nanotubes on a Metal Tip. Appl. Phys. Lett. 80, 506 (2002).(link)

4. Y. K. Pu*, Z. G. Guo, Z. D. Kang, J. Ma, Z. C. Guan, G. Y. Zhang & E. G. Wang, Comparative Characterization of High-density Plasma Reactors using Emission Spectroscopy from VUV to NIR. Pure and Applied Chemistry 74, 459 (2002).(link)

3. D. Y. Zhong, G. Y. Zhang, E. G. Wang*, Q. Wang, H. Li & X. J. Huang, Lithium Storage in Polymerized Carbon Nitride Nanobells. Appl. Phys. Lett. 79, 3500 (2001).(link)

2. X. D. Bai, D. Y. Zhong, G. Y. Zhang, X. C. Ma, Shuang Liu, E. G. Wang*, Yan Chen & David T. Shaw, Hydrogen storage in carbon nitride nanobells. Appl. Phys. Lett. 79, 1552 (2001).(link)

1. D. Y. Zhong, S. Liu, G. Y. Zhang & E. G. Wang*, Large-scale well aligned carbon nitride nanotube films: low temperature growth and electron field emission. J. Appl. Phys. 89, 5939 (2001).(link)

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著作章节:

1. 陈鹏,张广宇*,《自旋电子学导论》章节:碳基自旋电子学,韩秀峰主编,科学出版社2014年出版。

2. Jianling Meng, Rong Yang and Guangyu Zhang,《Nanocrystals in Non-volatile memory》第8章"Graphene Nanocrystal Flash Memory", Pan Stanford Publishing Pte. Ltd. Singapore. (To be appeared in 2016)

 

专利:

  • 13. CN201720018837.8 "二维材料范德瓦尔斯外延生长与修饰系统",张广宇、杨蓉、时东霞、李烁辉、余画(中国实用新型,授权)
  • 12. CN201720416429.8 "多功能电感耦合等离子体增强化学气相沉积系统",张广宇、杨蓉、时东霞、成蒙、谢贵柏(中国实用新型,授权)
  • 11. US Patent 8,956,978, 2015 "Semiconductor device, method for manufacturing semiconductor single-walled nanotubes, and approaches therefor" H. Dai, G. Zhang, P. Qi(Authorized)
  • 10. CN201310126470.8 "电光转换元件及其应用",张广宇、何聪丽、时东霞(中国发明,授权)
  • 9. CN201310102517.7 "金属硫属化物薄膜的制备方法",张广宇、时东霞、张菁(中国发明,授权)
  • 8. US Patent 8,252,405, 2012 "Single-walled carbon nanotubes and methods of preparation thereof" H. Dai, D. Mann, G. Zhang(Authorized)
  • 7. CN201210574577.4 "一种基于纳米石墨烯隧穿效应的人造皮肤及其制备方法",张广宇、赵静、时东霞(中国发明,授权)
  • 6. CN201210184172.X "基于分立式纳米石墨烯浮栅的新型低压高性能非易失性存储器",张广宇,杨蓉,时东霞(中国发明,授权)
  • 5. CN201110455639.5 "一种半导体纳米材料器件及其制作方法",刘冬华、张广宇、时东霞(中国发明,授权)
  • 4. CN201110222191.2 "一种异质外延生长石墨烯的方法",张广宇、张连昌、时东霞(中国发明,授权)
  • 3. CN201010191154.5 "一种在各种基底上直接生长石墨烯的方法",张广宇、时东霞、张连昌(中国发明,授权)
  • 2. CN200910091395.X "一种对石墨或石墨烯进行各向异性刻蚀的方法",张广宇、时东霞、杨蓉、王毅、张连昌(中国发明,授权)
  • 1. CN200910091396.4 "石墨烯纳机电系统开关器件",张广宇、时东霞、史志文、杨蓉、王毅(中国发明,授权)
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