Zhang Research Group (N07)

Nanoscale Physics and Devices Lab, IOP@CAS

Home>> Research>> Publications


2017

90.Renwei Liu, Suna Fan, Dongdong Xiao, Jin Zhang, Mengzhou Liao, Shansheng Yu, Fanling Meng, Baoli Liu, Lin Gu, Sheng Meng, Guangyu Zhang, Weitao Zheng, Shuxin Hu, and Ming Li*,Free-Standing Single-Molecule Thick Crystals Consisting of Linear Long-Chain Polymers. Nano Lett. Article ASAP, (2017),DOI: 10.1021/acs.nanolett.6b04896. (PDF)

89.Ruina Liu, Baoxin Liao, Xiangdong Guo, Debo Hu, Hai Hu, Luojun Du, Hua Yu, Guangyu Zhang, Xiaoxia Yang* and Qing Dai*,Study of graphene plasmons in graphene–MoS2 heterostructures for optoelectronic integrated devices. Nanoscale 9, 208 (2017),DOI: 10.1039/C6NR07081G. (PDF)

2016

88.Guocai Wang, Lihong Bao, Tengfei Pei, Ruisong Ma, Yu-Yang Zhang, Liling Sun, Guangyu Zhang, Haifang Yang, Junjie Li, Changzhi Gu, Shixuan Du, Sokrates T. Pantelides*, Ronald D. Schrimpf and Hong-jun Gao*,Introduction of Interfacial Charges to Black Phosphorus for a Family of Planar Devices. Nano Lett. 16, 6870 (2016),DOI: 10.1021/acs.nanolett.6b02704. (PDF)

87.Luojun Du, Hua Yu, Li Xie, Shuang Wu, Shuopei Wang, Xiaobo Lu, Mengzhou Liao, Jianling Meng, Jing Zhao, Jing Zhang, Jianqi Zhu, Peng Chen, Guole Wang, Rong Yang, Dongxia Shi and Guangyu Zhang*,The Effect of Twin Grain Boundary Tuned by Temperature on the Electrical Transport Properties of Monolayer MoS2. Crystals. 6, 115 (2016),DOI:10.3390/cryst6090115. (PDF)

86.Guole Wang, Li Xie, Peng Chen, Rong Yang*, Dongxia Shi and Guangyu Zhang*,Anisotropic etching of bilayer graphene controlled by gate voltage. Acta Physica Sinica. 65, 196101 (2016), DOI: 10.7498/aps.65.196101. (PDF)

85.Hua Yu, Zhengzhong Yang, Luojun Du, Jing Zhang, Jinan Shi, Wei Chen, Peng Chen, Mengzhou Liao, Jing Zhao, Jianling Meng, Guole Wang, Jianqi Zhu, Rong Yang, Dongxia Shi, Lin Gu, and Guangyu Zhang*, Precisely Aligned Monolayer MoS2 Epitaxially Grown on h-BN basal Plane. Small (2016), DOI:10.1002/smll.201603005. (PDF)

84. Hailong Chen†, Xiewen Wen†, Jing Zhang†, Tianmin Wu, Yongji Gong, Xiang Zhang, Jiangtan Yuan, Chongyue Yi, Jun Lou, Pulickel M. Ajayan, Wei Zhuang*, Guangyu Zhang* and Junrong Zheng*, Ultrafast Formation of Interlayer Hot Excitons in Atomically Thin MoS2/WS2 Heterostructures. Nature Communications (2016), doi:10.1038/ncomms12512.† Co-first author. (PDF)

83. Eryin Wang†, Xiaobo Lu†, Shijie Ding, Wei Yao, Mingzhe Yan, Guoliang Wan, Ke Deng, Shuopei Wang, Guorui Chen, Liguo Ma, Jeil Jung, Alexei Fedorov, Yuanbo Zhang, Guangyu Zhang and Shuyun Zhou*, Second generation Dirac cones and inversion symmetry breaking induced gaps in graphene/h-BN. Nature Physics (2016), doi:10.1038/nphys3856. † Co-first author. (PDF)

82. Eryin Wang, Guorui Chen, Guoliang Wan, Xiaobo Lu, Chaoyu Chen, Jose Avila,  Alexei Fedorov, Guangyu Zhang, Maria Asensio, Yuanbo Zhang and Shuyun Zhou*, Electronic structure of transferred graphene/h-BN van der Waals heterostructures with nonzero stacking angles by nano-ARPES. JPCM (2016) (PDF)

81. Yinjuan Huang, Yiyong Mai*, Uliana Beser, Joan Teyssandier, Gangamallaiah Velpula, Hans van Gorp, Lasse Arnt Straas, Michael Ryan Hansen, Daniele Rizzo, Cinzia Casiraghi, Rong Yang, Guangyu Zhang, Dongqing Wu, Fan Zhang, Deyue Yan, Steven De Feyter, Klaus Müllen and Xinliang Feng*, Poly(ethylene oxide) Functionalized Graphene Nanoribbons with Excellent Solution Processability. JACS (2016). DOI: 10.1021/jacs.6b07061(PDF)

80. Guole Wang, Shuang Wu, Tingting Zhang, Peng Chen, Xiaobo Lu, Shuopei Wang, Duoming Wang, Kenji Watanabe, Takashi Taniguchi, Dongxia Shi, Rong Yang* and Guangyu Zhang*, Patterning monolayer graphene with zigzag edges on hexagonal boron nitride by anisotropic etching. Appl. Phys. Lett. 109, 053101 (2016, Cover Story). Highlighted by A(PDF)

79. Jing Zhao†, Hua Yu†, Wei Chen, Rong Yang, Jianqi Zhu, Mengzhou Liao, Dongxia Shi, and Guangyu Zhang*, Patterned Peeling 2D MoS2 off the Substrate. ACS Appl. Mater. Interfaces 8, 16546 (2016). (†co-first authors) Highlighted by D4SCI.com.(PDF)

78. Jianling Meng, Guole Wang, Xiaomin Li, Xiaobo Lu, Jing Zhang, Hua Yu, Wei Chen, Luojun Du, Mengzhou Liao, Jing Zhao, Peng Chen, Jianqi Zhu, Xuedong Bai, Dongxia Shi* & Guangyu Zhang*, Rolling Up a Monolayer MoS2 Sheet. Small 12, 3770 (2016). Highlighted by D4SCI.com. (PDF)

77. Z. Zhao, H. Liu, Y. Zhao, C. Cheng, J. Zhao, Q. Tang, G. Zhang and Y. Liu*, Anisotropic Charge-Carrier Transport in High-Mobility Donor–Acceptor Conjugated Polymer Semiconductor Films. Chem. Asian J. doi:10.1002/asia.201600082 (2016). (PDF)

76. Chuancheng Jia, Agostino Migliore, Na Xin, Shaoyun Huang, Jinying Wang, Qi Yang, Shuopei Wang, Hongliang Chen, Duoming Wang, Boyong Feng, Zhirong Liu, Guangyu Zhang, Da-Hui Qu, He Tian, Mark A. Ratner, H. Q. Xu*, Abraham Nitzan*, Xuefeng Guo*, Covalently bonded single-molecule junctions with stable and reversible photoswitched conductivity. Science 352, 1443 (2016). (PDF)

75. Peng-Zhi Shao, Hai-Ming Zhao, Hui-Wen Cao, Xue-Feng Wang, Yu Pang, Yu-Xing Li, Ning-Qin Deng, Jing Zhang, Guangyu Zhang, Yi Yang, Sheng Zhang and Tian-Ling Ren*, Enhancement of carrier mobility in MoS2 field effect transistors by a SiO2 protective layer. Appl. Phys. Lett. 108, 203105 (2016). (PDF)

74. Duoming Wang, Guorui Chen, Chaokai Li, Meng Cheng, Wei Yang, Shuang Wu, Guibai Xie, Jing Zhang, Jing Zhao, Xiaobo Lu, Peng Chen, Guole Wang, Jianling Meng, Jian Tang, Rong Yang, Congli He, Donghua Liu, Dongxia Shi, Kenji Watanabe, Takashi Taniguchi, Ji Feng, Yuanbo Zhang, and Guangyu Zhang*, Thermally Induced Graphene Rotation on Hexagonal Boron Nitride. Phys. Rev. Lett. 116, 126101 (2016). (editors' suggestions) (PDF)

73. Patrick Gallagher, Menyoung Lee, Francois Amet, Petro Maksymovych, Jun Wang, Shuopei Wang, Xiaobo Lu, Guangyu Zhang, Kenji Watanabe, Takashi Taniguchi & David Goldhaber-Gordon*, Switchable friction enabled by nanoscale self-assembly on graphene. Nature Communications 7, 10745 (2016). (PDF)

72. Peng Chen, Tingting Zhang, Jing zhang, Jianyong Xiang, Hua Yu, Shuang Wu, Xiaobo Lu, Guole Wang, Fusheng Wen, Zhongyuan Liu, Rong Yang, Dongxia Shia and Guangyu Zhang*, Gate tunable WSe2–BP van der Waals heterojunction devices. Nanoscale 8, 3254 (2016). (PDF)

71. Wei Yang, Xiaobo Lu, Guorui Chen, Shuang Wu, Guibai Xie, Meng Cheng, Duoming Wang, Rong Yang, Dongxia Shi, Kenji Watanabe, Takashi Taniguchi, Christophe Voisin, Bernard Plaçais, Yuanbo Zhang, and Guangyu Zhang*, Hofstadter Butterfly and Many-Body Effects in Epitaxial Graphene Superlattice. Nano Lett. 16, 2387 (2016). (PDF)

70. Xiaobo Lu, Wei Yang, Shuopei Wang, Shuang Wu, Peng Chen, Jing Zhang, Jing Zhao, Jianling Meng, Guibai Xie, Duoming Wang, Guole Wang, Ting Ting Zhang, Kenji Watanabe, Takashi Taniguchi, Rong Yang, Dongxia Shi and Guangyu Zhang*, Graphene nanoribbons epitaxy on boron nitride. Appl. Phys. Lett. 108, 113103 (2016). (PDF)

69. Jing Zhang, Jinhuan Wang, Jianyong Xiang, Yue Sun, Shuang Wu, Zhiyan Jia, Hua Yu, Xiaobo Lu, Wei Chen, Peng Chen, Jianqi Zhu, Guibai Xie, Rong Yang, Dongxia Shi*, Xiulai Xu, Kaihui Liu and Guangyu Zhang*, Observation of Strong Interlayer Coupling in MoS2/WS2 heterostructures. Advanced Materials 28, 1950 (2016). (PDF)

68. Jing Zhao, Wei Chen, Jianling Meng, Hua Yu, Mengzhou Liao, Jianqi Zhu, Rong Yang, Dongxia Shi, Guangyu Zhang*, Integrated Flexible and High-Quality Thin Film Transistors Based on Monolayer MoS2. Advanced Electronic Materials 2, 1500379 (2016). (PDF)

2015

67. Xuefei Li, Xiaobo Lu, Tiaoyang Li, Wei Yang, Jianming Fang, Guangyu Zhang and Yanqing Wu*, Noise in Graphene Superlattices Grown on Hexagonal Boron Nitride. ACS Nano 9, 11382 (2015). (PDF)

66. Wei Chen†, Jing Zhao†, Jing Zhang†, Lin Gu, Zhenzhong Yang, Xiaomin Li, Hua Yu, Xuetao Zhu, Rong Yang, Dongxia Shi, Xuechun Lin, Jiandong Guo, Xuedong Bai, and Guangyu Zhang*, Oxygen-Assisted Chemical Vapor Deposition Growth of Large Single-Crystal and High-Quality Monolayer MoS2. J. Am. Chem. Soc. 137, 15632 (2015). († co-first authors) (PDF)

65. Jianling Meng, Rong Yang, Jing Zhao, Congli He, Guole Wang, Dongxia Shi* and Guangyu Zhang*, Nanographene charge trapping memory with a large memory window. Nanotechnology 26, 455704 (2015).(PDF)

64. Peng Chen, Jianyong Xiang, Hua Yu, Jing zhang, Guibai Xie, Shuang Wu, Xiaobo Lu, Guole Wang, Jing Zhao, Fusheng Wen, Zhongyuan Liu, Rong Yang, Dongxia Shi and Guangyu Zhang*, Gate tunable MoS2–black phosphorus heterojunction devices. 2D Materials 2, 034009 (2015). (invited paper) (PDF)

63. Jing Zhao, Guole Wang, Rong Yang, Xiaobo Lu, Meng Cheng, Congli He, Guibai Xie, Jianling Meng, Dongxia Shi, and Guangyu Zhang*, Tunable Piezoresistivity of Nanographene Films for Strain Sensing. ACS Nano 9, 1622 (2015). (PDF)

62. 卢晓波,张广宇*,石墨烯莫尔超晶格。物理学报 64, 77305 (2015). (invited paper) PDF)

61. 沈成, 张菁, 时东霞, 张广宇*,退火对单层二硫化钼荧光特性的影响。化学学报 73, 954 (2015). (invited paper) (PDF)

2014

60. Lifen Wang, Donghua Liu, Shize Yang, Xuezeng Tian, Guangyu Zhang, Wenlong Wang, Enge Wang, Zhi Xu, Xuedong Bai*,Exotic Reaction Front Migration and Stage Structure in Lithiated Silicon Nanowires. ACS Nano 8, 8249 (2014). (PDF)

59. Yiwei Liu, Rong Yang, Huali Yang, Duoming Wang, Qingfeng Zhan, Guangyu Zhang, Yali Xie, Bin Chen and Run-Wei Li*, Anomalous anisotropic magnetoresistance effects in graphene. AIP Advances 4, 097101 (2014)(PDF).

58. Y. Guo, L. W. Guo, J. Huang, R. Yang, Y. P. Jia, J. J. Lin, W. Lu, Z. L. Li, and X. L. Chen, The correlation of epitaxial graphene properties and morphology of SiC(0001). J. Appl. Phys. 115, 043527 (2014). (PDF)

57. Jianling Meng, Dongxia Shi and Guangyu Zhang*,A review of nanographene: growth and applications. Mod. Phys. Lett. B 28, 1430009 (2014). (invited review) (PDF)

56. Shuang Wu, Rong Yang, Meng Cheng, Wei Yang, Guibai Xie, Peng Chen, Dongxia Shi, and Guangyu Zhang*, Defect-enhanced coupling between graphene and SiO2 substrate. Appl. Phys. Lett. 105, 063113 (2014). (PDF)

55. Jingjing Lin, Liwei Guo, Yuping Jia, Rong Yang, Shuang Wu, Jiao Huang, Yu Guo, Zhilin Li, Guangyu Zhang and Xiaolong Chen*, Identification of dominant scattering mechanism in epitaxial graphene on SiC. Appl. Phys. Lett. 104, 183102 (2014). (PDF)

54. R. Yang†, S. Wu†, D. M. Wang, G. B. Xie, M. Cheng, G. L. Wang, W. Yang, P. Chen, D. X. Shi, G. Y. Zhang*,Fabrication of high-quality all-graphene devices with low contact resistances. Nano Research 7, 1449 (2014). († co-first authors) (PDF)

53. J. Zhang, H. Yu, W. Chen, X. Z. Tian, D. H. Liu, M. Cheng, G. B. Xie, W. Yang, R. Yang, X. D. Bai, D. X. Shi and G. Y. Zhang*, Scalable Growth of High-Quality Polycrystalline MoS2 Monolayers on SiO2 with Tunable Grain Sizes. ACS Nano 8, 6024 (2014). (PDF)

52. M. Cheng†, D. M. Wang†, Z. R. Sun, J. Zhao, R. Yang, G. L. Wang, W. Yang, G. B. Xie, J. Zhang, P. Chen, C. L. He, D. H. Liu, L. M. Xu, D. X. Shi, E. G. Wang and G. Y. Zhang*, A Route towards Digital Manipulation of Water Nanodroplets on Surface. ACS Nano 8, 3955 (2014). († co-first authors) (PDF)

51. Zhiwen Shi, Chenhao Jin, Wei Yang, Long Ju,  Jason Horng, Xiaobo Lu, Hans A. Bechtel, Michael C. Martin, Deyi Fu, Junqiao Wu, Kenji Watanabe, Takashi Taniguchi, Yuanbo Zhang, Xuedong Bai, Enge Wang, Guangyu Zhang* & Feng Wang*,Gate-dependent pseudospin mixing in graphene/boron nitride moiré superlattices. Nature Physics 10, 743 (2014). (PDF)

50. Zhi-Guo Chen, Zhiwen Shi, Wei Yang, Xiaobo Lu, You Lai, Hugen Yan, Feng Wang*, Guangyu Zhang* & Zhiqiang Li*, Observation of an intrinsic bandgap and Landau level renormalization in graphene/boron-nitride heterostructures. Nature Communications 5, 4461 (2014). (PDF)

49. L. Ju, J. Velasco Jr., E. Huang, S. Kahn, C. Nosiglia, H. Tsai, W. Yang, T. Taniguchi, K. Watanabe, Y. B. Zhang, G. Y. Zhang, M. Crommie, A. Zettl and F. Wang*, Photoinduced Doping in Graphene/Boron Nitride Heterostructures. Nature Nanotechnology 9, 348 (2014). (PDF)

48. G. B. Xie, R. Yang, P. Chen, J. Zhang, X. Z. Tian, Shuang. Wu, J. Zhao, M. Cheng, W. Yang, D. M. Wang, C. L. He, X. D. Bai, D. X. Shi* and G. Y. Zhang*, A General Route Towards Defect and Pore Engineering in Graphene. Small 10, 2280 (2014). (invited paper) (PDF)

47. D. H. Liu, W. Yang, L. C. Zhang, J. Zhang, J. L. Meng, R. Yang, G. Y. Zhang, D. X. Shi*, Two-step growth of graphene with separate controlling nucleation and edge growth directly on SiO2 substrates. Carbon 72, 387 (2014). (PDF)

2013

46. Wei Yang, Guorui Chen, Zhiwen Shi, Cheng-Cheng Liu, Lianchang Zhang, Guibai Xie, Meng Cheng, Duoming Wang, Rong Yang, Dongxia Shi, Kenji Watanabe, Takashi Taniguchi, Yugui Yao, Yuanbo Zhang and Guangyu Zhang*, Epitaxial growth of single-domain graphene on hexagonal boron nitride. Nature Materials 12, 792 (2013). (PDF)

45. Congli He, Jiafang Li, Xing Wu, Peng Chen, Jing Zhao, Kuibo Yin, Meng Cheng, Wei Yang, Guibai Xie, Duoming Wang, Donghua Liu, Rong Yang, Dongxia Shi, Zhiyuan Li, Litao Sun and Guangyu Zhang*, Tunable Electroluminescence in Planar Graphene/SiO2 Memristors. Advanced Materials 25, 5593 (2013). (PDF)

44. Rong Yang†, Chenxin Zhu†, Jianling Meng, Zongliang Huo, Meng Cheng, Donghua Liu, Wei Yang, Dongxia Shi, Ming Liu and Guangyu Zhang*, Isolated nanographene crystals for nano-floating gate in charge trapping memory. Scientific Reports 3, 2126 (2013). († co-first authors) (PDF)

43. C. J. Lin, X. Y. He, J. Liao, X. X. Wang, V. Sacksteder IV, W. M. Yang, T. Guan, Q. M. Zhang, L. Gu, G. Y. Zhang, C. G. Zeng, X. Dai, K. H. Wu, and Y. Q. Li,* Parallel field magnetoresistance in topological insulator thin films. Phys. Rev. B 88, 041307R (2013). (PDF)

42. Jing Zhao, Guangyu Zhang and Dongxia Shi*, Review on graphene-based strain sensors. Chinese Physics B 22, 057701 (2013). (invited review) (PDF)

41. Peng Chen and Guangyu Zhang*, Carbon-based spintronics. Science China-Physics Mechanics & Astronomy 56, 207 (2013). (invited review) (PDF)

2012

40. Lianchang Zhang*, Ming Ni, Donghua Liu, Dongxia Shi and Guangyu Zhang, Competitive Growth and Etching of Epitaxial Graphene. J. Phys. Chem. C. 116, 26929 (2012). (PDF)

39. Guibai Xie, Zhiwen Shi, Rong Yang, Donghua Liu, Wei Yang, Meng Cheng, Duoming Wang, Dongxia Shi and Guangyu Zhang*, Graphene Edge Lithography. Nano Letters 12, 4642 (2012). (PDF)

38. Jing Zhao, Congli He, Rong Yang, Zhiwen Shi, Meng Cheng, Wei Yang, Guibai Xie, Duoming Wang, Dongxia Shi and Guangyu Zhang*, Ultra-sensitive strain sensors based on piezoresistive nanographene films. Appl. Phys. Lett. 101, 063112 (2012). (PDF)

37. Donghua Liu, Zhiwen Shi, Lianchang Zhang, Congli He, Jing Zhang, Meng Cheng, Rong Yang, Xuezeng Tian, Xuedong Bai, Dongxia Shi and Guangyu Zhang*, Reducing the contact resistance of SiNW devices by employing a heavily doped carrier injection layer. Nanotechnology 23, 305701 (2012). (PDF)

36. Congli He, Zhiwen Shi, Lianchang Zhang, Wei Yang, Rong Yang, Dongxia Shi, and Guangyu Zhang*, Multilevel Resistive Switching in Planar Graphene/SiO2 Nanogap Structures. ACS Nano 6, 4214 (2012). (PDF)

35. Lianchang Zhang, Zhiwen Shi, Donghua Liu, Rong Yang, Dongxia Shi, Guangyu Zhang*, Vapour-Phase Graphene Epitaxy at Low Temperatures. Nano Research 5, 258 (2012). (PDF)

34. Meng Cheng, Rong Yang, Lianchang Zhang, Zhiwen Shi, Wei Yang, Duoming Wang, Guibai Xie, Dongxia Shi, Guangyu Zhang*, Restoration of graphene from graphene oxide by defect repair. Carbon 50, 2581 (2012). (PDF)

33. Wei Yang, Congli He, Lianchang Zhang, Yi Wang, Zhiwen Shi, Meng Cheng, Guibai Xie, Duoming Wang, Rong Yang, Dongxia Shi, Guangyu Zhang*, Growth, Characterization, and Properties of Nanographene. Small 8, 1429 (2012). (invited paper) (PDF)

32. Shuang Wu , Rong Yang , Dongxia Shi and Guangyu Zhang*, Identification of structural defects in graphitic materials by gas-phase anisotropic etching. Nanoscale 4, 2005 (2012). (PDF)

31. Zhiwen Shi, Hongliang Lu, Lianchang Zhang, Rong Yang, Yi Wang, Donghua Liu, Haiming Guo, Dongxia Shi, Hongjun Gao, Enge Wang, Guangyu Zhang*, Studies of Graphene-Based Nanoelectromechanical Switches. Nano Research 5, 82 (2012). (PDF)

2011

30. Chenxin Zhu, Zhongguang Xu, Zongliang Huo, Rong Yang, Zhiwei Zheng, Yanxiang Cui, Jing Liu, Yumei Wang, Dongxia Shi, Guangyu Zhang, Fanghua Li, and Ming Liu*, Investigation on interface related charge trap and loss characteristics of high-k based trapping structures by electrostatic force microscopy. Appl. Phys. Lett. 99, 223504 (2011). (PDF)

29. Rong Yang, Zhiwen Shi, Lianchang Zhang, Dongxia Shi, Guangyu Zhang*, Observation of Raman G-Peak Split for Graphene Nanoribbons with Hydrogen Terminated Zigzag Edges. Nano Letters 11, 4083 (2011). (PDF)

28. Zhiwen Shi, Rong Yang, Lianchang Zhang, Yi Wang, Donghua Liu, Dongxia Shi, Enge Wang, and Guangyu Zhang*, Patterning Graphene with Zigzag Edges by Self-Aligned Anisotropic Etching. Advanced Materials 23, 3061 (2011). (PDF)

27. Yi Wang, Rong Yang, Zhiwen Shi, Lianchang Zhang, Dongxia Shi, Enge Wang and Guangyu Zhang*, Super-Elastic Graphene Ripples for Flexible Strain Sensors. ACS Nano 5, 3645 (2011). (PDF)

26. Lianchang Zhang, Zhiwen Shi, Yi Wang, Rong Yang, Dongxia Shi and Guangyu Zhang*, Catalyst-free growth of nanographene film on various substrates. Nano Research 4, 315 (2011). (PDF)

2010

25. Rong Yang, Lianchang Zhang, Yi Wang, Zhiwen Shi, Dongxia Shi, Hongjun Gao, Enge Wang and Guangyu Zhang*, An Anisotropic Etching Effect in the Graphene Basal Plane. Advanced Materials 22, 4014 (2010). (PDF)

24. R. Yang, Q. S. Huang, X. L. Chen, G. Y. Zhang* and H. -J. Gao, Substrate Doping Effects on Raman Spectrum of Epitaxial Graphene on SiC. J. Appl. Phys.107, 034305 (2010). (PDF)

2009

23. S. Ma; V. V. S. S. Srikanth; D. Maik; G. Y. Zhang; T. Staedler and X. Jiang*, From carbon nanobells to nickel nanotubes. Appl. Phys. Lett. 94, 013109 (2009).  (PDF)

22. X. M. Sun, S. M. Tabakman, W. S. Seo, L. Zhang, G. Y. Zhang, S. Sherlock, L. Bai, H. Dai*, Separation of Nanoparticles in a Density Gradient: FeCo@C and Gold Nanocrystals. Angew. Chem. Int. Ed. 48, 939 (2009). (PDF)

2008

21. Z. Chen, S. M. Tabakman, A. P. Goodwin, M. G. Kattah, D. Daranciang, X. Wang, G.Y. Zhang, X.L. Li, Z. Liu, P. J. Utz, K. Jiang, S. Fan & H. Dai*, Protein microarrays with carbon nanotubes as multicolor Raman labels. Nature Biotechnology 26, 1285 (2008). (PDF)

20. X. L. Li, G. Y. Zhang, X.D. Bai, X. M. Sun, X. R. Wang, E. G. Wang and H. Dai*, Highly Conducting Graphene Sheets and Langmuir-Blodgett Films. Nature Nanotechnology 3, 538 (2008). (PDF)

19. P. H. Tan, J. Zhang, X. C. Wang, G. Y. Zhang, E. G. Wang*, Raman Scattering from an Individual Tubular Graphite Cone. Carbon 45, 1116 (2007). (PDF)

18. M. Panzer, G. Y. Zhang, D. Mann, et al. Thermal properties of the aligned SWNT arrays. Journal of Heat Transfer 130, 052401 (2008). (PDF)

17. G. Y. Zhang, P. F. Qi, X. R. Wang, Y. R. Lu, X. L. Li, R. Tu, S. Bangsaruntip, D. Mann, L. Zhang & H. Dai*, Selectively Etching of Metallic Carbon Nanotubes by Gas-phase Reaction. Science 314, 974 (2006). (PDF)

16. G. Y. Zhang, P. F. Qi, X. R. Wang, Y. R. Lu, D. Mann, X. L. Li & H. Dai*, Hydrogenation, Hydrocarbonation and etching of single walled carbon nanotubes. J. Am. Chem. Soc. 128, 6026 (2006). (PDF)

15. G. Y. Zhang; X. R. Wang; X. L. Li; Y. R. Lu; A. Javey and H. J. Dai*, Carbon nanotubes: From growth, placement and assembly control to 60mV/decade and sub-60 mV/decade tunnel transistors. IEDM 1&2, 160 (2006). (PDF)

14. G. Y. Zhang, D. Mann, L. Zhang, A. Javey, Y. M. Li, E. Yenilmez, Q. Wang, J. P. McVittie, Y. Nishi, J. Gibbons & H. Dai*, Ultra-high-yield growth of vertical single-walled carbon nanotubes: Hidden roles of hydrogen and oxygen. PNAS 102, 16141 (2005). (PDF)

13. G. Y. Zhang, X. D. Bai, E. G. Wang*, Y. Guo & W. L. Guo, Monochiral tubular graphite cones formed by radial layer-by-layer growth. Phys. Rev. B 71, 113411 (2005). (PDF)

12. G. Y. Zhang, X. Jiang* & E. G. Wang*, Self-assembly of carbon nanohelices: Characteristics and FEE properties. Appl. Phys. Lett. 84, 2646 (2004). (PDF)

11. 张广宇,王恩哥*,一种新的纳米结构—管状石墨锥。物理 32,567 (2003). (PDF)

10. 葛颂,冯孙齐,俞大鹏*,张广宇,刘双, 取向碳纳米管膜的大面积制备及其场发射性能的研究。北京大学学报 39, 341 (2003). (PDF)

9. G. Y. Zhang, X. Jiang* & E. G. Wang*, Tubular Graphite cones. Science 300, 472 (2003). (PDF)

8. G. Y. Zhang & E. G. Wang*, Cu-filled carbon nanotubes by simultaneous plasma-assisted copper incorporation. Appl. Phys. Lett. 82, 1926 (2003). (PDF)

7. D. Y. Zhong, Z. G. Guo, J. Ma, M. M. Zhou, Y. K. Pu, S. Liu, G. Y. Zhang & E.G. Wang*, Optical emission spectroscopy study of the nitrogen influence on carbon nanotube growth. Carbon 41, 1827 (2003). (PDF)

6. G. Y. Zhang, X. C. Ma, D. Y. Zhong & E. G. Wang*, Polymerized carbon nitride nanobells. J. Appl. Phys. 91, 9324 (2002). (PDF)

5. D. Y. Zhong, G.Y. Zhang, S. Liu, T. Sakurai & E. G. Wang*, Universal Field Emission Model for Carbon Nanotubes on a Metal Tip. Appl. Phys. Lett. 80, 506 (2002). (PDF)

4. Y. K. Pu*, Z. G. Guo, Z. D. Kang, J. Ma, Z. C. Guan, G. Y. Zhang & E. G. Wang, Comparative Characterization of High-density Plasma Reactors using Emission Spectroscopy from VUV to NIR. Pure and Applied Chemistry 74, 459 (2002). (PDF)

3. D. Y. Zhong, G. Y. Zhang, E. G. Wang*, Q. Wang, H. Li & X. J. Huang, Lithium Storage in Polymerized Carbon Nitride Nanobells. Appl. Phys. Lett. 79, 3500 (2001). (PDF)

2. X. D. Bai, D. Y. Zhong, G. Y. Zhang, X. C. Ma, Shuang Liu, E. G. Wang*, Yan Chen & David T. Shaw, Hydrogen storage in carbon nitride nanobells. Appl. Phys. Lett. 79, 1552 (2001). (PDF)

1. D. Y. Zhong, S. Liu, G. Y. Zhang & E. G. Wang*, Large-scale well aligned carbon nitride nanotube films: low temperature growth and electron field emission. J. Appl. Phys. 89, 5939 (2001). (PDF)

 

Book Chapters:

1. 陈鹏,张广宇*,《自旋电子学导论》章节:"碳基自旋电子学",韩秀峰主编,科学出版社2014年出版。

2. Jianling Meng, Rong Yang and Guangyu Zhang,Nanocrystals in Non-volatile memory》第8"Graphene Nanocrystal Flash Memory", Pan Stanford Publishing Pte. Ltd. Singapore. (To be appeared in 2016)

 

Issued Patents:

  • 1. ZL200910091396.4 "石墨烯纳机电系统开关器件"张广宇、时东霞、史志文、杨蓉、王毅
  • 2. ZL200910091395.X "一种对石墨或石墨烯进行各向异性刻蚀的方法"张广宇、时东霞、杨蓉、王毅、张连昌
  • 3. ZL201010191154.5 "一种在各种基底上直接生长石墨烯的方法"张广宇, 时东霞, 张连昌
  • 4. ZL201110222191.2 "一种异质外延生长石墨烯的方法"张广宇、张连昌、时东霞
  • 5. ZL2011104556395 "一种半导体纳米材料器件及其制作方法"刘冬华 张广宇 时东霞
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