Yongqing Li Group Website, Institute
of Physics, Chinese Academy of Sciences, Beijing |
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Misc.
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Selected publications: Evidence for half-metallicity in n-type HgCr_{2}Se_{4}, Phys. Rev. Lett. (2015), accepted, also at arXiv:1503.03190. Proximity effect between a topological insulator and a
magnetic insulator with large perpendicular anisotropy, Appl. Phys. Lett. 105, 092411 (2014). Tunable surface conductivity in Bi_{2}Se_{3}
revealed with diffusive electron transport, Phys. Rev. B 83,
241304(R) (2011), selected
as Editors¡¯ Suggestion. Also highlighted in a commentary article ¡°Whispers in bedlam: detecting the Dirac
metal at a surface of a topological insulator by means of weak localization¡±by
Leonid Glazman. Gate-voltage control of chemical potential and weak
antilocalization in Bi_{2}Se_{3}, Phys. Rev.
Lett. 105,
176602 (2010). Full list of publications since 2010: 2015: [20]
J. Liao, Y. B. Ou, X. Feng, S. Yang, C. J. Lin, W. M. Yang, K. H. Wu, K. He,
X. C. Ma, Q.-K. Xue, and Y. Q. Li, Observation of Anderson localization in ultrathin films
of three-dimensional topological insulators. PHYS. REV. LETT 114, 216601 (2015). [19]
T. Guan, C. J. Lin, C. L. Yang, Y. G. Shi, C. Ren, Y. Q. Li, H. M. Weng, X.
Dai, Z. Fang, S. S. Yan, and P. Xiong, Evidence for half-metallicity in n-type HgCr_{2}Se_{4}.
PHYS. REV. LETT (2015), also at arXiv:1503.03190. [18]
T. Guan, B. Friess, Y. Q. Li, S. S. Yan, V. Umansky, K. von Klitzing, and J.
H. Smet, Disorder
enhanced nuclear spin relaxation at Landau level filling factor one.
CHIN. PHYS. B 24, 067302 (2015) [Editorial highlight], also at arXiv:1504.01980. [17]
T. Guan, J. Teng, K. H. Wu, and Y. Q. Li, Linear magnetoresistance in topological insulator (Bi_{0.5}Sb_{0.5})_{2}Te_{3}
thin films. ACTA PHYS. SINICA 64,
077201 (2015). [16] C. Kastl, P.
Seifert, X. Y. He, K. H. Wu, Y. Q. Li, and A. W. Holleitner, Chemical
potential fluctuations in topological insulator (Bi_{0.5}Sb_{0.5})_{2}Te_{3}
films visualized by photocurrent spectroscopy. 2D MATER. 2, 024012
(2015). [15]
Y. Liang, W. T. Li, S. Y. Zhang, C. J. Lin, C. Li, Y. Yao, Y. Q. Li, H.
Yang, and J. D. Guo, Homoepitaxial
SrTiO_{3}(111) film with high dielectric performance and atomically
well-defined surface. SCI. REP. 5, 10634 (2015). [14]
J. Zhu, Z.-X. Yang, X.-Y. Hou, T. Guan, Q.-T. Zhang, Y. Q. Li, X.-F. Han, J.
Zhang, C.-H. Li, L. Shan, G.-F. Chen, and C. Ren, Tunneling spectroscopy of Al/AlO_{x}/Pb
subjected to hydrostatic pressure. APPL. PHYS. LETT. 106, 202601 (2015). 2014£º [13] W. M. Yang, S. Yang,
Q. H. Zhang, Y. Xu, S. P. Shen,
J. Liao, J. Teng, C. W. Nan, L. Gu, Y. Sun, K. H. Wu, and Y. Q. Li, Proximity
effect between a topological insulator and a magnetic insulator with large
perpendicular anisotropy. APPL. PHYS. LETT. 105, 092411 (2014). 2013£º [12]
C. J. Lin, X. Y. He, J. Liao, X. X. Wang, V. Sacksteder IV, W. M. Yang, T.
Guan, Q. M. Zhang, L. Gu, G. Y. Zhang, C. G. Zeng, X. Dai, K. H. Wu, and Y.
Q. Li, Parallel
field magnetoresistance of three-dimensional topological insulator thin
films. PHYS. REV. B 88,
041307 (R) (2013). [11] W. M. Yang, C. J.
Lin, J. Liao, and Y. Q. Li, Electrostatic field effects on three-dimensional
topological insulators (invited review article). CHIN.
PHYS. B 22, 097202 (2013). 2012£º [10] Y. Q. Li, V. Umansky,
K. von Klitzing, and J. H. Smet, Current induced nuclear spin depolarization at
Landau level filling factor nu=1/2. Phys. Rev. B 86,
115421 (2012) [Editors¡¯ Suggestion]. [9] X. Y. He, T. Guan, X. X. Wang, B.J. Feng, P. Cheng, L.
Chen, Y. Q. Li and K. H. Wu, Highly tunable electron transport in epitaxial
topological insulator (Bi_{1-x}Sb_{x})_{2}Te_{3}
thin films. Appl. Phys. Lett. 101, 123111 (2012). [8] C. Kastl, T. Guan, X. Y. He, K. H. Wu, Y. Q. Li, and
A. W. Holleitner, Local photocurrent generation in thin films of the
topological insulator Bi_{2}Se_{3}. APPL. PHYS. LETT. 101, 251110 (2012). [7] X. X. Wang, X. Y. He, T. Guan, J. Liao, C. J. Lin, K.
H. Wu, Y. Q. Li and C. G. Zeng, Transport properties of topological insulator Bi_{2}Se_{3}
thin films in tilted magnetic fields. PHYSICA E 46, 236-240 (2012). [6] Y. Q. Li, K. H. Wu, J. R. Shi, and X. C. Xie, Electron
transport properties of three-dimensional topological insulators (invited review article). FRONT. PHYS. 7, 165 (2012). 2011: [5] J. Chen, X. Y. He, K. H. Wu, Z. Q. Ji, L. Lu, J. R.
Shi, J. H. Smet, and Y. Q. Li, Tunable surface conductivity in Bi_{2}Se_{3}
revealed with diffusive electron transport. PHYS.
REV. B 83, 241304 (R) (2011) [Editors¡¯ suggestion], also at arXiv:1104:0986.
See also: Commentary article¡°Whispers in bedlam: detecting the Dirac metal at a surface of a topological
insulator by means of weak localization¡±by Leonid Glazman on
Journal Club for Condensed Matter Physics. [4] G. H. Zhang, H. J. Qin, J. Chen, X. Y. He, Y. Q. Li,
and K. H. Wu, Growth
of topological insulator Bi_{2}Se_{3} thin films on SrTiO_{3}
with large gate-voltage-tunable chemical potential. ADV. FUNC.
MATER. 21£¬2351
(2011). [3] K. H. Wu and Y. Q. Li, Growth and gate-controlled electron
transport properties of topological insulator thin films (invited
review article). PHYSICS (China) 40,
440 (2011). [2] F. M. Qu, F. Yang, J. Chen, J. Shen, Y. Ding, J. B.
Lu, Y. J. Song, H. X. Yang, G. T. Liu, J. Fan, Y. Q. Li, Z. Q. Ji, C. L.
Yang, and L. Lu, Aharonov-Casher effect in Bi_{2}Se_{3}
square-ring interferometers. PHYS. REV. LETT. 107, 016802 (2011). 2010: [1] J. Chen, H. J. Qin,
F. Yang, J. Liu, T. Guan, F. M. Qu, G. H. Zhang, J. R. Shi, X. C. Xie, C. L.
Yang, K. H. Wu*, Y. Q. Li*, and L. Lu, Gate
voltage control of chemical potential and weak antilocalization in Bi_{2}Se_{3}. PHYS. REV. LETT. 105, 176602 (2010). |