Nanoscale Physics and Devices Laboratory

Prof. Hongjun GAO's

Nano Research Group

Institute of Physics

 

 
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  The research progress in our group
 
 
  • Monolayer PtSe2, a New Semiconducting Transition-Metal-Dichalcogenide, Epitaxially Grown by Direct Selenization of Pt
    Nano Lett. 15(6),4013 (2015)
 
   
   
   
  • Controlled Synthesis of Large-Scale, Uniform, Vertically Standing Graphene for High-Performance Field Emitters
    Adv. Mater. 25, 250 (2013)
     
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  • Tuning Structural and Mechanical Properties of Two-Dimensional Molecular Crystals: The Roles of Carbon Side Chains
    Nano Lett. 12, 1229 (2012)
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  • Field emission properties of patterned boron nanocones

    Nanotechnology 1,325705 (2010)

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  • Identifying Multiple Configurations of Complex Molecules in Dynamical Processes: Time Resolved Tunneling Spectroscopy and Density Functional Theory Calculation
    Phys. Rev. Lett. 104, 166101 (2010).
 
 
 
 
 
 
 
 
 
 
 
 
 
 
  • Highly ordered, Millimeter-scale, continuous, single crystalline graphene monolayer formed on Ru(0001)
    Adv. Mater. 21, 2777 (2009)

    highlights by Nature China
 
 
     
 

 
 
 
 
 
  • Boron nanowires for flexible electronics
    Appl. Phys. Lett. 93, 122105 (2008)
 
 
 
 
   
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
  • Tip size effect on the appearance of a STM image for complex surfaces:
    Theory versus experiment for Si(111)-
    (7ˇÁ7)

    Phys. Rew. B 70,073312 (2004)
 
 
 
 
   
 
 
     
 
     

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