Nanoscale Physics and Devices Laboratory

Prof. Hongjun GAO's

Nano Research Group

Institute of Physics


Home Members Highlights Publications Awards Opportunities News Chinese Version

Dr. Yeliang WANG                               Link to Chinese Page

    Nanoscale Physics and Devices Laboratory
    Institute of Physics,Chinese Academy of Sciences (CAS)

    Address: NanSanJie 8, ZhongGuanCun, HaiDian District, Beijing 100190,China.
    Tel: (+86) 10 8264 8072 (or 8264 8044)
    Fax: (+86) 10 8264 9189

    Current occupation: Subgroup leader in Hong-jun GAO's group


2007, Mediterranean sea

Tel:   (+86)-10-8264 8072
Fax:   (+86)-10-8264 9189

### Yeliang Wang - Google Scholar Citations ###


Professional Experience

2013.8-    Professor,
                 Institute of Physics, Chinese Academy of Sciences (CAS);

2008.1-2013.8    Associate Professor,
                 Institute of Physics, Chinese Academy of Sciences (CAS);

2004.10-2008.1  Visiting Scientist, Alexander von Humboldt Fellow,
                in the Nanoscale Science Department (hosted by Prof. Klaus KERN),
                Max Planck Institute for Solid State Research, Stuttgart;

2004.7-2004.10  Research assistant in the group of Prof. Hong-jun Gao,
             Nanoscale Physics and Devices Laboratory, Institute of Physics, CAS;
           (2002.4-2002.10  Visiting students in the group of Prof. Harald Fuchs,
                 at the Institute of Physics, M邦nster University, Germany);



2001.7-2004.7  PhD in Physics in the Nanoscale Physics and Devices Laboratory, Institute of Physics, CAS;
1998.9-2001.7  Master in Materials science, Wuhan University of Technology;

1994.9-1998.7   Bachelor in Materials science, Wuhan University of Technology;

Current Research Topics

  •   Advanced experimental techniques [e.g. scanning probe microscopy(SPM), molecular beam epitaxial (MBE), X-ray photoelectron spectroscopy (XPS), angle-resolved photoemission spectroscopy (ARPES)];

  •   Design and fabrication of two-dimentional crystalline materials and their heterolayers [e.g. MX2, MX3, MX5];

  •   Monolayer graphene and graphene-like monolayer honeycomb structures ( e.g. silience, germanene, hafene, antimonene) and their properties;

  •   Superconductoring and spin properties of nanoscale structures at interfaces;

  •   Physics & chemistry of functional molecular ensembles on surfaces [ e.g. metal-organic frameworks (MOFs) and other functional organic-inorganic complex];


Representative Works


      (16) Two-dimensional magnetic material: monolayer VSe2. Investigation of 2D magnetic properties is still in its infancy, hindered by the lack of both high-quality 2D samples with few-atom thickness and measurement techniques for magnetism in thin samples. Magnetism in monolayer VSe2 is theoretically predicted. In this work, we report growth of monolayer VSe2 on a HOPG substrate by MBE. The monolayer VSe2 has characteristic magnetism density of states (DOS) peaks matching the theoretical prediction and a low work function at the edge. Moreover, an air exposure experiment shows the air-stability of the monolayer VSe2. This high-quality monolayer VSe2, a very air-inert 2D material with magnetism and low edge work function, has promise for applications in developing next-generation low power-consumption, high efficiency spintronic devices and electrocatalysis-related devices.

[Science Bulletin 63,419 (2018)]

monolayer antimonene


      (15)  Intrinsic nanoscale patterning. For the PtSe2 case, the process starts with "selenization", a selenium treatment process that produces a monolayer of PtSe2 on the platinum(111) crystal surface either by post-growth annealing or by establishing a Se deficiency during growth, Se vacancies form that self-organize into triangular boundaries tiling the surface in sub-5-nm domains that alternate between the semiconducting 1T phase and the metallic 1H phase. Without Se vacancies the entire surface is in the semiconducting 1T phase. The edge-on interfaces between the 1H and 1T domains potentially represent ideal metal每semiconductor junctions for device applications. Furthermore, in a process analogous to doping in conventional semiconductors, it may be possible to render the 1T semiconducting regions either electron rich (n-type) or deficient (p-type). Pentacene molecules adsorb preferentially onto only the 1H regions. This may alter these metallic regions so that they add or remove electrons (that is, dope) the adjacent 1T semiconducting regions. Further investigation on the edge-on metal每semiconductor junctions of the 1T/1H PtSe2 system may give rise to future high-performance nanoelectronic devices. An intriguing glimpse into the potential generality of the selenization method is also demonstrated. A selenized copper(111) surface converts into a monolayer of CuSe. Unlike the PtSe2 case, however, there is stronger interaction between the CuSe layer and the substrate that results in mechanical strain between the two. This strain is accommodated by the formation of a regular array of voids in the CuSe surface.

Challenges do remain. For example, many applications will require transferring the PtSe2 and CuSe layers from their growth substrates to desired target substrates such as silicon wafers for electronic applications or microfluidic substrates for filtration applications. (News and Views by Prof. Lyding in UIUC, APS/AVS/IEEE fellow)

[Nature Materials 16,717 (2017)] [(highighted in News and Views)]

monolayer antimonene


      (14)  Recently, several theoretical publications have predicted a new graphene-like 2D material named ※antimonene,§ which has a large bandgap of 2.28 eV in monolayer, and shows promise for applications in electronic MOSFET and photoelectric devices.

We report the epitaxial growth of graphene-like monolayer antimonene on a PdTe2 substrate by molecular beam epitaxy. The morphology and configuration of epitaxial monolayer antimonene at atomic scale for the first time has been determined by LEED and STM. Combining the evidence with DFT calculations, we verified that the monolayer antimonene fabricated on PdTe2 substrate is a 2D continuous monolayer with a buckled conformation. Moreover, we performed XPS measurements to confirm that the antimonene has a weak van der Waals interaction with the substrate and, intriguingly, is quite inert to oxygen atmosphere. Our present work provides a method to produce high quality monolayer antimonene that is very chemically inert and has a large bandgap, which is a significant advance for the development of electronic and optoelectronic nanodevices.

In following, a uniform and single-crystalline flat antimonene monolayer without atomic wrinkles, as a new honeycomb analogue of graphene monolayer,is epitaxially grown on a Ag(111) substrate. Directional bonding between adjacent Sb atoms and weak antimonene-substrate interaction are confirmed. The realization and investigation of flat antimonene honeycombs extends the scope of two-dimensional atomically-thick structures and provides a promising way to tune topological properties for future technological applications.

[ Adv. Mater. 29, 1605407 (2017)] ; [Nano Lett. 18, 2213 (2018)]

monolayer antimonene

Flat antimonene

      (13)  Experimental realization of a superconductor-topological insulator (HfTe3/HfTe5) layered heterostructure. we fabricated a superconductor每topological insulator每normal metal heterostructure with a layered configuration of HfTe3/HfTe5/Hf for the first time. This heterostructure can indeed form spontaneouslyby tuning the experimental paramenters. The atomic structure of the heterostructure has been determined by in situ STM and XPS. STS measurements directly reveal a bandgap as large as 60 meV in HfTe5 film and a superconducting spectrum in HfTe3/HfTe5 film. The generated hybrid structure HfTe3/HfTe5/Hf has potential applications in both quantum-spin Hall effect-based and Majorana-based devices for novel technological applications like high-efficiency quantum computation.

Unlike the artificial film lift-transfer-stacking technique, our current method of making desired heterostructures is based on a spontaneous formation process of surface reaction and epitaxial growth and significantly simplifies the fabrication process. This method may offer new routes for the development of other related functional heterostructures and nanodevices.

[ Adv. Mater. 28, 5013 (2016)]

HfTe3 & HfTe5 Layered Heterostructure

      (12)  Fabrication of platinum diselenide (PtSe2) monolayer by a selenization method. High-quality, single-crystalline PtSe2, a new member of the family of transition-metal-dichalcogenides (TMDs, with the general formula MX2), is obtained at a Pt(111) at a relatively low temperature. In contrast to conventional fabrication methods of MX2 by exfoliation or chemical vapor deposition with precursors, the current precursor-free method towards a monolayer dichalcogenide is very straightforward: only one element, Se, is deposited on a Pt substrate following a selenization process. Characterizations by LEED, STM, STEM, and DFT calculations elucidated both in-plane and vertical monolayer structures with atomic resolution. The ARPES data for the first time directly reveal monolayer PtSe2 is a semiconductor, in contrast to a semimetal in its bulk form.

In view of the simplicity of the production method and the advantages of the semiconducting nature, PtSe2 film has potential for use in practical applications. Indeed, our photodegradation experiment demonstrates its practical application as a visible light-driven photocatalyst. Moreover, Spin-layer locking by local Rashba effect in monolayer semiconducting PtSe2 are directly observed. circular polarization calculations indicate that monolayer PtSe2 is a good candidate for valleytronics. Our studies are a significant step forward in expanding the family of single-layer semiconducting TMDs and exploring the application potentials of thin TMDs in photoelectronic and energy-harvesting devices.

[Nano Lett.15, 4013 (2015)]; [Nature Commun. 8, 14216 (2017)]


PtSe2 monolayer

      (11)  Germanene, a 2D honeycomb lattice analogous to graphene, is fabricated on a Pt(111) surface. Germanene exhibits a buckled configuration with a (3x3) superlattice coinciding with the substrate's (﹟19x﹟19) superstructure. Covalent bonds exist throughout the germanene layer. The resulting high-quality germanene enables researchers to explore the fundamentals of germanene and its potential applications.
         It is the first experimental work to create germanene. An interview by Prof. Guy Le Lay in "Popular Science" pointed out that ※a Chinese team became the first to create germanene" and cited our current work.

[Adv.Mater. 26, 4820 (2014)]


      (10)  Transition metal honeycomb structures. We report the first examples of 2D honeycomb systems made of elements with d electrons, i.e., hafnium honeycomb on Ir and Rh substrates. Interesting ferromagnetism, high density of d states at the Fermi level, and large spin-splitting of the Dirac cones are theoretically predicted for a freestanding Hf honeycomb structure. This work is reported by Nature China and Nature Nanotechnology as research highlights. The observations are selected as the Cover of PHYSICS.

[Nano Lett.13, 4671 (2013)]


      (9) Silicene, a 2D honeycomb structure similar to graphene, has been successfully fabricated on Ir(111).This work provides a method to fabricate high-quality silicene and an explanation for the formation of the buckled silicene sheet. This work is cited by Nature News. The observations are selected as the Cover of PHYSICS. Regarding silicene-graphene layered structures, which can be constructed by intercalating silicene layer underneath graphene layer by an intercalation method. Such novel heterolayered 2D material integrating silicene with graphene, may be compatible with current microelectronic technology and link up with potential applications in nanoelectronics and related areas.

[Nano Lett. 13, 685 (2013); Chinese Phys.B 24, 086803 (2015)]


      (8)  Large-scale single-crystalline graphene was epitaxially grown on metals, like Ru(0001) and Ir(111). Free-standing graphene by intercalating Si or Hf layers between graphene and its metal host has been achieved. This G/Si(Hf)/metal architecture holds the high structural and electronic qualities. This approach eliminates the need for the graphene transfer and also allows for an atomic control of the distance between the graphene and the metal.

Besides by the method of silicon-layer-intercalation, a new, easy, in situ technique for fabricating a two-dimensional graphene-silicon layered heterostructure has been developed to meet the demand for integration between graphene and silicon-based microelectronic technology. First, carbon atoms are stored in bulk iridium, and then silicon atoms are deposited onto the Ir(111) surface and annealed. With longer annealing times, the carbon atoms penetrate from the bulk iridium to the top of the silicon and eventually coalesce there into graphene islands [Method of carbon penetration of silicon film].

[Appl. Phys. Lett. 100, 083101 (2012); J.Phys.: Cond. Mat.24, 314214 (2012); Appl. Phys. Lett. 102, 093106 (2013);

Invited book chapter (2013); Nanotechnology 28,084003 (2017)]

graphene on Ir(111)

Si atoms pumpup


      (7) A single Young*s modulus is found to apply for all configurations in a molecular films, the magnitude of which is controlled by flexible side chain length, suggesting a versatile avenue for tuning not only the physical properties of molecular films but also their elastic properties.

[Nano Lett.12, 1229 (2012)]

QA chains

      (6) Direct STM observations at single molecular scale on the substitution of enantiomers in a homochiral structure by opposite enantiomers, resulting in a heterochiral structure. Our findings are significant for the understanding and control of chiral phase transitions in related molecular systems like liquid crystals.

[J. Am. Chem. Soc. 132, 10440 (2010)]


      (5) Functional metal-organic coordination networks at surfaces. Supramolecular nanostructures with tunable dimensionalities are fabricated by molecular design with a hierarchical approach. X-ray photoelectron spectroscopy (XPS) measurements provide clear evidence for genuine metal-organic coordination. The results provide the first clear evidence for charge-transfer coordination in metal-organic networks at surfaces.

[J. Am. Chem. Soc. 130, 2108 (2008); Chem. Communi. 48, 534 (2012); J. Phys. Chem. C 117, 3440 (2013)]


      (4) 2D co-crystallization approach for ordering of dispersed biomolecule system at surfaces. Molecular "glue" are used to bridge the isolated dipeptide chains without altering their inherent structure nor modifying the final surface chirality.

[J. Am. Chem. Soc. 129, 15742 (2007)]

2D chains


      (3) STM observations demonstrated individual Ge atoms can replace the Si adatoms rather than adsorb directly atop of Si adatoms at elevated temperature, which is validated by the theoretical calculations that Ge每Si substitution configuration is more energetically favorable.

[Phys. Rev. Lett. 94,106101 (2005)]

Ge replacing Si

      (2)  The highest resolution STM imaging on Si(111)-7℅7 surfaces, in which all the six rest atoms and twelve adatoms are resolved simultaneously with unprecedented high-contrast. The STM images are adopted by Nobel Prize winner Prof. Polanyi in Chem. Rev. 106, 4321 (2006). "Physicsworld" also adopted our images in “Resolution Frontiers”. Also as an invited paper for 30 years STM in Chimia 66, 31 (2012).

[Phys. Rev.B 70, 073312 (2004), J. Nanomaterials (2008)]

Si rest atoms

      (1)  In-situ observations of the evolution of the pentacene self-assembled structures by MBE-LEED while deposition.

[Phys. Rev.B 69, 705408 (2004)]


Selected Publications

Zhong-Liu Liu, Xu Wu, Yan Shao, Jing Qi, Yun Cao, Li Huang, Chen Liu, Jia-Ou Wang, Qi Zheng, Zhi-Li Zhu, Kurash Ibrahim, Ye-Liang Wang*, and Hong-Jun Gao*,
"Epitaxially grown monolayer VSe2: an air-stable magnetic two-dimensional material with low work function at edges ",
Science Bulletin 63(7),419-425 (2018). 1

Yan Shao, Zhong-Liu Liu, Cai Cheng, Xu Wu, Hang Liu, Chen Liu, Jiaou Wang, Shi-Yu Zhu, Yu-Qi Wang, Dong-Xia Shi, Kurash Ibrahim, Jiatao Sun*, Yeliang Wang*, and Hong-Jun Gao,
"Epitaxial growth of flat antimonene monolayer: a new honeycomb analogue of graphene",
Nano Lett. 18, 2213 (2018). 1

J.-Z. Ma, J.-B. He, Y.-F. Xu, B. Q. Lv, D. Chen, W.-L. Zhu, S. Zhang, L.-Y. Kong, X. Gao, L.-Y. Rong, Y.-B. Huang, P. Richard, C.-Y. Xi, E. S. Choi, Y. Shao, Y.-L. Wang, H.-J. Gao, X. Dai, C. Fang, H.-M. Weng, G.-F. Chen*, T. Qian*,and H. Ding*,
"Three-component fermions with surface Fermi arcs in tungsten carbide ",
Nature Physics DOI: 10.1038/s41567-017-0021-8 (2018). 1

Shengli Zhang, Shiying Guo, Zhongfang Chen, Yeliang Wang, Hongjun Gao, Julio G車mez-Herrero, Pablo Ares, F谷lix Zamora*, Zhen Zhu and Haibo Zeng*,
"Recent progress in 2D group-VA semiconductors: from theory to experiment ",
Chem. Soc. Rev. 47, 982-1021 (2018). 1

X. Lin#, J. C. Lu#, Y. Shao#, Y. Y. Zhang#, X. Wu, J. B. Pan, L. Gao,S. Y. Zhu, K. Qian, Y. F. Zhang, D. L. Bao, L. F. Li, Y. Q. Wang, Z. L. Liu, J. T. Sun, T. Lei, C. Liu, J. O. Wang, K. Ibrahim, D. N. Leonard, W. Zhou, H. M. Guo, Y. L. Wang*, S. X. Du*, S. T. Pantelides, H.-J. Gao*,
"Intrinsically patterned two-dimensional materials for selective adsorption of molecules and nanoclusters ",
Nature Materials 16, 717 (2017). 1 (highighted in News and Views)1

Xu Wu, Yan Shao, Hang Liu, Zili Feng, Ye-Liang Wang*,Jia-tao Sun, Chen Liu, Jia-Ou Wang, Zhong-liu Liu, Shi-Yu Zhu, Yu-Qi Wang, Shi-xuan Du, You-guo Shi, Kurash Ibrahim, Hong-Jun Gao*,
" Epitaxial Growth and Air-Stability of Monolayer Antimonene on PdTe2",
Adv. Mater. 29, 1605407 (2017). 1

Lei Meng, Yeliang Wang*, Linfei Li, and Hong-Jun Gao,
"Fabrication of Graphene-Silicon Layered Heterostructures by Carbon Penetration of Silicon Film",
Nanotechnology 28, 084003 (2017). 1

Yan Shao, Shiru Song, Xu Wu, Jing Qi, Hongliang Lu, Chen Liu, Shiyu Zhu, Zhongliu Liu, Jiaou Wang, Dongxia Shi, Shixuan Du*, Yeliang Wang*, and Hong-Jun Gao,
"Epitaxial fabrication of two-dimensional NiSe2 on Ni(111) substrate",
Appl. Phys. Lett. 111, 113107 (2017). 1

Rongting Wu, Junhai Ren, Li Dong,Yeliang Wang*, Qing Huan*, and Hong-Jun Gao,
"Quasi-free-standing graphene nano-islands on Ag(110), grown from solid carbon source",
Appl. Phys. Lett. 110, 213107 (2017). 1

Wei Yao, Eryin Wang, Huaqing Huang, Ke Deng, Mingzhe Yan, Kenan Zhang, Taichi Okuda, Chaoxing Liu, Linfei Li, Yeliang Wang, Hongjun Gao, Wenhui Duan and Shuyun Zhou*,
"Direct observation of spin-layer locking by local Rashba effect in monolayer semiconducting PtSe2 ",
Nature Commun. 8, 14216 (2017). 1

Zhihui Qin, Jinbo Pan, Shuangzan Lu, Yan Shao, Yeliang Wang, Shixuan Du*, Hong-Jun Gao, and Gengyu Cao*,
"Direct Evidence of Dirac Signature in Bilayer Germanene Islands on Cu(111)",
Adv. Mater. 29, 1606046 (2017). 1

Li Huang, Yanfang Zhang, Yu-Yang Zhang, Wenyan Xu, Yande Que, En Li, Jinbo Pan,Ye-Liang Wang,Yunqi Liu, Shixuan Du*, Sokrates Pantelides, Hong-jun Gao*,
"Sequence of Silicon Monolayer Structures Grown on a Ru Surface: from a Herringbone Structure to Silicene",
Nano Lett. 17, 1161 (2017). 1

Junhai Ren, De-Liang Bao, Li Dong, Lei Gao, Rongting Wu, Linghao Yan, Aiwei Wang, Jiahao Yan, Yeliang Wang, Qing Huan*, Jia-Tao Sun, Shixuan Du*, and Hong-Jun Gao,
"Lattice-Directed Construction of Metal–Organic Molecular Wires of Pentacene on the Au(110) Surface",
J. Phys. Chem. C 121, 21650 (2017). 1

Yu-Qi Wang, Xu Wu, Ye-Liang Wang*, Yan Shao, Tao Lei, Jia-Ou Wang, Shi-Yu Zhu, Haiming Guo, Ling-Xiao Zhao, Gen-Fu Chen, Simin Nie, Hong-Ming Weng, Kurash Ibrahim, Xi Dai, Zhong Fang, Hong-Jun Gao*
"Spontaneous Formation of a Superconductor-Topological Insulator-Normal Metal Layered Heterostructure",
Adv. Mater. 28, 5013 (2016). 1

Yu-Qi Wang, Xu Wu, Yan-Feng Ge,Ye-Liang Wang*, Haiming Guo, Yan Shao, Tao Lei, Chen Liu, Jia-Ou Wang, Shi-Yu Zhu, Zhong-Liu Liu, Wei Guo, Kurash Ibrahim, Yu-Gui Yao, Hong-Jun Gao*,
"Tunable electronic structures in wrinkled two-dimensional transition-metaltrichalcogenide (TMT) HfTe3 films",
Advanced Electronic Materials 2, 1600324 (2016). 1

Min Gao, Yanfang Zhang, Li Huang, Yi Pan, Yeliang Wang*, Feng Ding, Yuan Lin, Shixuan Du*, and Hong-Jun Gao,
"Unveiling carbon dimers and their chains as precursor of graphene growth on Ru(0001)",
Appl. Phys. Lett. 109, 131604 (2016). 1

Jun Li,Chengmin Shen*,Yande Que,Yuan Tian,Lili Jiang,Deliang Bao,Yeliang Wang, Shixuan Du,and Hong-Jun Gao*,
"Copper vapor-assisted growth of hexagonal graphene domains on silica islands",
Appl. Phys. Lett. 108, 063102 (2016). 1

Jun Li,Jianing Zhuang,Chengmin Shen*,Yuan Tian,Yande Que,Ruisong Ma,Jinbo Pan,Yanfang Zhang,Yeliang Wang, Shixuan Du,Feng Ding,and Hong-Jun Gao*,
"Impurity-induced formation of bilayered graphene on copper by chemical vapor deposition",
Nano Research 9, 2803 (2016). 1

Yeliang Wang, Linfei Li, Wei Yao, Shiru Song, J. T. Sun, Jinbo Pan, Xiao Ren, Chen Li, Eiji Okunishi, Yu-Qi Wang, Eryin Wang, Yan Shao, Y. Y. Zhang, Hai-tao Yang, Eike F. Schwier, H. Iwasawa, K. Shimada, M. Taniguchi, Zhaohua Cheng, Shuyun Zhou*, Shixuan Du*, S. J. Pennycook, Sokrates T. Pantelides, and Hong-Jun Gao*,
"Monolayer PtSe2, a New Semiconducting Transition-Metal-Dichalcogenide, Epitaxially Grown by Direct Selenization of Pt",
Nano Lett. 15, 4013 (2015). 1

Yande Que, Yong Zhang, Yeliang Wang, Li Huang, Wenyan Xu, Jing Tao, Lijun Wu, Yimei Zhu, Kisslinger Kim, Michael Weinl, Matthias Schreck, Chengmin Shen, Shixuan Du, Yunqi Liu, Hong-Jun Gao*,
"Graphene-Silicon Layered Structures on Single-Crystalline Ir(111) Thin Films",
Advanced Materials Interfaces 2,1400543 (2015). 1

Rongting Wu, Linghao Yan, Yanfang Zhang, Junhai Ren, Deliang Bao, Haigang Zhang, Yeliang Wang, Shixuan Du*, Qing Huan*, and Hong-Jun Gao*,
"Self-Assembled Patterns and Young*s Modulus of Single-Layer Naphthalocyanine Molecules on Ag(111)",
J. Phys. Chem. C 119, 8208每8212 (2015). 1

Sheng-Yi Xie, Xian-Bin Li*, Wei Quan Tian, Nian-Ke Chen, Yeliang Wang, Shengbai Zhang, and Hong-Bo Sun*,
"A novel two-dimensional MgB6 crystal: metal-layer stabilized boron kagome lattice",
Phys. Chem. Chem. Phys. 17, 1093-1098 (2015).1

Meng Lei, Wang Ye-Liang*, Zhang Li-Zhi, Du Shi-Xuan, Gao Hong-Jun*,
"Fabrication and properties of silicene and silicene每graphene layered structures on Ir(111)",
Chinese Phys.B 24(8), 086803 (2015).(Review article)1

Zhang Yong, Wang Ye-Liang, Que Yan-De, and Gao Hong-Jun,
"Characterizing silicon intercalated graphene grown epitaxially on Ir films by atomic force microscopy",
Chinese Phys.B 24(7), 078104 (2015).1

Yan Ling-Hao, Wu Rong-Ting, Bao De-Liang, Ren Jun-Hai, Zhang Yan-Fang, Zhang Hai-Gang, Huang Li, Wang Ye-Liang, Du Shi-Xuan, Huan Qing, and Gao Hong-Jun,
"Adsorption behavior of Fe atoms on a naphthalocyanine monolayer on Ag(111) surface",
Chinese Phys.B 24(7), 076802 (2015).1

Linfei Li, Shuang-zan Lu, Jinbo Pan, Zhihui Qin*, Yu-qi Wang, Yeliang Wang*, Geng-yu Cao, Shixuan Du, and Hong-Jun Gao*,
"Buckled Germanene Formation on Pt(111)",
Adv. Mater. 26, 4820 (2014). 1

Yu Yang Zhang, Ye-Liang Wang, Lei Meng, Sheng Bai Zhang*, and Hong-Jun Gao*,
"Thermally Controlled Adenine Dimer Chain Rotation on Cu(110): The Critical Role of van der Waals Interactions",
J. Phys. Chem. C 118, 6278 每 6282 (2014). 1

Haiming Guo, Yeliang Wang, Shixuan Du and Hong-jun Gao*,
"High-resolution scanning tunneling microscopy imaging of Si(1 1 1)-7 x 7 structure and intrinsic molecular states",
J. Phys.: Condens. Matter 26, 394001 (2014). (23 pages, Review article). 1

Xu Wen-Yan, Huang Li, Que Yan-De, Li En, Zhang Hai-Gang, Lin Xiao, Wang Ye-Liang, Du Shi-Xuan, Gao Hong-Jun,
"High quality sub-monolayer, monolayer, and bilayer graphene on Ru (0001)",
Chinese Physics B 23, 098101 (2014). 1

Yi Pan, Lizhi Zhang, Li Huang, Linfei Li, Lei Meng, Min Gao, Qing Huan, Xiao Lin, Yeliang Wang, Shixuan Du, Hans-Joachim Freund, and Hong-Jun Gao*,
"Construction of 2D Atomic Crystals on Transition Metal Surfaces: Graphene, Silicene, and Hafnene",
Small 10, 2215每22251 (2014).1

L. Z. Zhang, S. X. Du, J. T. Sun, L. Huang, L. Meng, W. Y. Xu, L. D. Pan, Y. Pan, Y.L.Wang, W. A. Hofer, and H.-J. Gao*,
"Growth Mechanism of Metal Clusters on a Graphene/Ru(0001) Template",
Adv. Mater. Interfaces 1,13001041(2014).1

Xu Wen-Yan, Huang Li, Que Yan-De, Lin Xiao, Wang Ye-Liang, Du Shi-Xuan, Gao Hong-Jun,
"Effects of graphene defects on Co cluster nucleation and intercalation",
Chinese Physics B 23,088108 (2014).1

Sheng-Yi Xie, Xian-Bin Li*, Wei Quan Tian, Nian-Ke Chen, Xu-Lin Zhang, Yeliang Wang, Shengbai Zhang, Hong-Bo Sun*,
"First-principles calculations of a robust two-dimensional boron honeycomb sandwiching a triangular molybdenum layer",
Physical Review B 90, 035447 (2014). 1

Linfei Li#, Yeliang Wang#*, Shengyi Xie, Xian-Bin Li, Yu-Qi Wang, Rongting Wu, Hongbo Sun, Shengbai Zhang*, and Hong-Jun Gao*,
"Two-Dimensional Transition Metal Honeycomb Realized: Hf on Ir(111)",
Nano Lett. 13, 4671 (2013). 1         Highlighted by Nature China and Nature Nanotechnology.

Lei Meng#, Yeliang Wang#*, Lizhi Zhang, Shixuan Du, Rongting Wu, Linfei Li, Yi Zhang, Geng Li, Haitao Zhou, Werner A. Hofer,and Hong-Jun Gao*,
"Buckled Silicene Formation on Ir(111)",
Nano Lett. 13, 685 (2013). 1         Cited by Nature News. Cover of PHYSICS.

Linfei Li, Yeliang Wang*, Lei Meng, Rong-ting Wu, and H.-J. Gao*,
"Hafnium intercalation between epitaxial graphene and Ir(111) substrate",
Appl. Phys. Lett. 102, 093106 (2013). 1

Yeliang Wang, Magali Lingenfelder, Stefano Fabris, Guido Fratesi, Riccardo Ferrando,Thomas Classen, Klaus Kern, and Giovanni Costantini*,
"Programming Hierarchical Supramolecular Nanostructures by Molecular Design",
J. Phys. Chem. C 117, 3440 (2013). 1

Liwei Liu, Kai Yang, Yuhang Jiang, Boqun Song, Wende Xiao, Linfei Li,Haitao Zhou, Yeliang Wang, Shixuan Du, Min Ouyang, Werner A. Hofer, Antonio H. Castro Neto & Hong-Jun Gao*,
"Reversible Single Spin Control of Individual Magnetic Molecule by Hydrogen Atom Adsorption",
Scientific Reports  3, 1210 (2013). 1

Huang Li, Xu Wen-Yan, Que Yan-De, Mao Jin-Hai, Meng Lei, Pan Li-Da, Li Geng, Wang Ye-Liang, Du Shi-Xuan, Liu Yun-Qi, Gao Hong-Jun,
"Intercalation of metals and silicon at the interface of epitaxial graphene and its substrates",
Chinese Physics B 22, 096803 (2013). 1

Haitao Zhou, Lizhi Zhang, Jinhai Mao, Geng Li, Yi Zhang, Yeliang Wang, Shixuan Du, Werner A. Hofer, Hong-Jun Gao*,
"Template-directed assembly of pentacene molecules on epitaxial graphene on Ru(0001)",
Nano Research  6, 131 (2013). 1


Lei Meng, Rongting Wu, Haitao Zhou, Geng Li, Yi Zhang, Linfei Li, Yeliang Wang*,and H.-J. Gao*,
"Silicon intercalation at the interface of graphene and Ir(111)",
Appl. Phys. Lett. 100, 083101 (2012). 1

Huanyao Cun, Yeliang Wang, Shixuan Du, Lei Zhang, Lizhi Zhang, Bing Yan, Xiaobo He,Yue Wang,Xueyan Zhu,Quanzi Yuan,Ya-Pu Zhao,Min Ouyang,Werner A. Hofer,Stephen J. Pennycook,and Hong-jun Gao*,
"Tuning Structural and Mechanical Properties of Two-Dimensional Molecular Crystals: The Roles of Carbon Side Chains",
Nano Lett.12, 1229-1234 (2012). 1

Lei Meng, RongtingWu, Lizhi Zhang, Linfei Li, Shixuan Du, Yeliang Wang*, and Hong-jun Gao*,
"Multi-oriented moire superstructures of graphene on Ir(111): experimental observations and theoretical models",
J. Phys.: Condens. Matter 24, 314214 (2012). 1

Yeliang Wang, Stefano Fabris, Thomas W. White, Federico Pagliuca, Paolo Moras, Marco Papagno, Dinesh Topwal,Polina Sheverdyaeva, Carlo Carbone, Magali Lingenfelder, Thomas Classen, Klaus Kern and Giovanni Costantini*,
"Varying molecular interactions by coverage in supramolecular surface Chemistry",
Chemical Communications 48, 534-536 (2012). 1

Jinhai Mao, Li Huang, Yi Pan, Min Gao, Junfeng He, Haitao Zhou,Haiming Guo,Yuan Tian, Qiang Zou, Lizhi Zhang, Haigang Zhang, Yeliang Wang, Shixuan Du,Xingjiang Zhou, A. H. Castro Neto,and Hong-Jun Gao*,
"Silicon layer intercalation of centimeter-scale, epitaxially grown monolayer graphene on Ru(0001)",
Appl. Phys. Lett. 100, 093101 (2012) (Cover story). 1

G. Li, H. T. Zhou, L. D. Pan, Y. Zhang, J. H. Mao, Q. Zou, H. M. Guo, Y. L. Wang, S. X. Du, and H.-J. Gao*,
"Self-assembly of C60 monolayer on epitaxially grown, nanostructured graphene on Ru(0001) surface",
Appl. Phys. Lett. 100, 013304 (2012). 1

H. T. Zhou, J. H. Mao, G. Li, Y. L. Wang, X. L. Feng, S. X. Du, K. Mu llen, and H.-J. Gao*,
※Direct Imaging of Intrinsic Molecular Orbitals Using Two-dimensional, Epitaxially-grown, Nanostructured Graphene for Study of Single Molecule and Interactions§,
Appl. Phys. Lett. 99, 153101 (2011) (Cover story). 1

Li Huang, Yi Pan, Lida Pan, Min Gao, Wenyan Xu, Yande Que, Haitao Zhou, Yeliang Wang, Shixuan Du, and H.-J. Gao*,
※Intercalation of Metal Islands and Films at the Interface of Epitaxially Grown Graphene and Ru(0001) Surfaces§,
Appl. Phys. Lett. 99, 163107 (2011). 1

B. Yang, Yeliang Wang, H. Y. Cun, S. X. Du, M. C. Xu, Y. Wang, Karl-Heinz Ernst and H. -J. Gao,
"Direct Observation of Enantiospecific Substitution in a Two-Dimensional Chiral Phase Transition",
J. Am. Chem. Soc.132, 10440每10444 (2010) 1

N. Jiang, Yeliang Wang, Q. Liu, Y. Y. Zhang, Z. T. Deng, K.-H. Ernst and H.-J. Gao,
"Polymorphism and chiral expression in two-dimensional subphthalocyanine crystals on Au(111)",
Phys. Chem. Chem. Phys. 12, 1318-1322 (2010). 1

H. Y. Cun, Yeliang Wang, B. Yang, L. Zhang, S. X. Du, Y. Wang, K. H. Ernst and H. -J. Gao,
"Homochiral Recognition among Organic Molecules on Copper(110)",
Langmuir 26, 3402-3406 (2010). 1

Yeliang Wang, Stefano Fabris, Giovanni Costantini and Klaus Kern,
"Tertiary Chiral Domains Assembled by Achiral Metal-Organic Complexes on Cu(110)",
J. Phys. Chem. C 114, 13020 (2010). 1

S. X. Du, Y. L. Wang, Q. Liu, H. G. Zhang, H. M. Guo and H. -J. Gao,
"Understanding formation of molecular rotor array on Au(111) surface",
Front. Phys. China 5(4), 380 (2010). 1

B. Yang, Y. L. Wang, G. Li, H. Y. Cun, Y. Ma, S. X. Du, M. C. Xu, Y. L. Song, H. -J. Gao,
"Influence of Deoxyribose Group on Self-Assembly of Thymidine on Au(111)",
J. Phys. Chem. C 113, 17590 (2009). 1

Steven L. Tait, Yeliang Wang, Giovanni Costantini, Nian Lin, Alessandro Baraldi, Friedrich Esch, Luca Petaccia, Silvano Lizzit, and Klaus Kern,
"Metal〞Organic Coordination Interactions in Fe〞Terephthalic Acid Networks on Cu(100)",
J. Am. Chem. Soc. 130, 2108 (2008)
. 1

Yeliang Wang, Magal赤 Lingenfelder, Thomas Classen, Giovanni Costantini, and Klaus Kern,
"Ordering of Dipeptide Chains on Cu Surfaces through 2D Co-crystallization",
J. Am. Chem. Soc. 129, 15742 (2007). 1

T. Classen, M. Lingenfelder, Y. L.Wang, R. Chopra, C. Virojanadara, U. Starke, G. Costantini, G. Fratesi, S. Fabris, S. de Gironcoli, S. Baroni, S. Haq, R. Raval, and K. Kern,
"Hydrogen and coordination bonding supramolecular structures of trimesic acid on Cu(110)",
J. Phys. Chem. A 111, 12740 (2007). 1


Y. L. Wang, H. -J. Gao, H. M. Guo, Sanwu Wang, and Sokrates T. Pantelides,
"Bonding configurations and collective patterns of Ge atoms adsorbed on Si(111)-7℅7",
Phys. Rev. Lett. 94,106101 (2005). 1

Y. L. Wang, H.-J. Gao, H. M. Guo, H.W. Liu, I. G. Batyrev, W. E. McMahon, and S.B. Zhang,
"Tip size effect on STM images appearance for complex surfaces: theory versus experiment for Si(111)-(7℅7)",
Phys. Rev. B 70, 073312 (2004). 1
The STM images are adopted by Nobel Prize winner Prof. Polanyi in Chem. Rev. 106, 4321 (2006).
"Physicsworld" also adopted our images in “Resolution Frontiers”.
Also as an invited paper for 30 years STM in Chimia 66, 31 (2012).

Y. L. Wang, W. Ji, D. X. Shi, S. X. Du, C. Seidel, H.-J. Gao, L. F. Chi, and H. Fuchs,
"Structural Evolution of Pentacene on Ag (110) Surface",
Phys. Rev. B 69, 075408 (2004). 1

Book Chapters / Reviews

Ye-Liang Wang, Hai-Ming Guo, and Hong-Jun Gao,
Chapter 25 Graphene on Crystalline Metal Surfaces§,
in book <<Surface and Interface Science>>
Ed. Klaus Wandelt, Wiely-VCH, 2014. (Invited book chapter).

Ye-liang Wang, Zhi-hai Cheng, Zhi-tao Deng, Hai-ming Guo, Shi-xuan Du, and Hong-jun Gao,
"Modifying the STM Tip for the &Ultimate* Imaging of the Si(111)-7℅7 Surface and Metal-supported Molecules",
CHIMIA 66, 30-37 (2012) (Invited paper for 30th years of STM). 1

Yeliang Wang, Qi Liu, Haigang Zhang, Haiming Guo,and Hong -Jun Gao,
Chapter 11 Molecular Rotors Observed by Scanning Tunneling Microscopy§ ,
in book <<Three-Dimensional Nanoarchitectures Designing Next-Generation Devices>>
Eds. Zhou Weiie and Wang Zhonglin, Pages 287-316, Springer, 2011. (Invited book chapter).

Ye-Liang Wang, Hai-Ming Guo, Zhi-Hui Qin, Hai-Feng Ma, and Hong-Jun Gao,
"Toward a Detailed Understanding of Si(111)-7℅7 Surface and Adsorbed Ge Nanostructures: Fabrications, Structures,and Calculations",
Journal of Nanomaterials doi:10.1155/2008/874213 (Review article), 2008. 1


Chinese Page      

Yeliang Wang - Google Scholar Citations

      Latest updated time: 2018-03-25


Copyrights: 2004-2010, All rights reserved. Nanoscale Physics and Devices Laboratory, Institute of Physics, Chinese Academy of Sciences.
P.O.Box 603, NanSanJie 8, ZhongGuanCun, Beijing 100190,China.
Tel: 0086-10-62551106; Fax: 0086-10-62556598;